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Na Mea Lawe WafermeHoʻopili ʻia ʻo Silicon Carbide (SiC).mai semicera ua hoʻolālā akamai ʻia no ka ulu ʻana o ka epitaxial kiʻekiʻe, e hōʻoia ana i nā hopena maikaʻi loaʻO EpitaxyaSiC Epitaxynā noi. Hoʻokumu ʻia nā mea lawe ʻenehana kikoʻī o Semicera e kū i nā kūlana koʻikoʻi, e hoʻolilo iā lākou i mau mea pono i nā ʻōnaehana MOCVD Susceptor no nā ʻoihana e koi ana i ka pololei kiʻekiʻe a me ka lōʻihi.
He nui kēia mau mea lawe wafer, kākoʻo i nā kaʻina hana koʻikoʻi me nā lako e like mePSS Etching Carrier, ICP Etching Carrier, aRTP lawe lawe. Hoʻonui kā lākou SiC Coating i ka hana no nā noi likeLED EpitaxialʻO Susceptor a me Monocrystalline Silicon, e hōʻoiaʻiʻo ana i nā hopena like ʻole i nā wahi koi.
Loaʻa i nā hoʻonohonoho he nui, e like me Barrel Susceptor a me Pancake Susceptor, he kuleana koʻikoʻi kēia mau mea lawe i ka hana photovoltaic a me semiconductor, e kākoʻo ana i ka hana ʻana o Photovoltaic Parts a me ka hoʻomaʻamaʻa ʻana i ka GaN ma nā kaʻina hana SiC Epitaxy. Me kā lākou hoʻolālā kiʻekiʻe, he waiwai nui kēia mau mea lawe no nā mea hana e manaʻo nei no ka hana kiʻekiʻe.
Nā hiʻohiʻona nui
1 .High maemae SiC uhi graphite
2. ʻOi aku ka maikaʻi o ka wela a me ke kūlike o ka wela
3. MaikaʻiUa uhi ʻia ʻo SiC crystalno ka ili pahee
4. Kiʻekiʻe ka lōʻihi e kū'ē i ka hoʻomaʻemaʻe kemika
ʻO nā kikoʻī nui o ka CVD-SIC Coatings:
| SiC-CVD | ||
| ʻO ka mānoanoa | (g/cc) | 3.21 |
| Ka ikaika wiliwili | (Mpa) | 470 |
| Hoʻonui wela | (10-6/K) | 4 |
| ʻO ke kau wela wela | (W/mK) | 300 |
Hoʻopili a hoʻouna
Hiki ke hoolako:
10000 ʻāpana / ʻāpana i kēlā me kēia mahina
Puke a me ka lawe ʻana:
Hoʻopili: Kūʻai maʻamau & ikaika
ʻeke poli + pahu + pahu pahu + pallet
Awa:
Ningbo/Shenzhen/Shanghai
Ka manawa o waena o ka hoʻomaka a i ka wā pau:
| Nui (Nā ʻāpana) | 1-1000 | >1000 |
| Est. Manawa(lā) | 30 | E kūkākūkā ʻia |
