4 Iniha N-ʻano SiC substrate

ʻO ka wehewehe pōkole:

ʻO Semicera's 4 Inch N-type SiC Substrates i hoʻolālā maikaʻi ʻia no ka hana uila a me ka wela i ka uila uila a me nā noi kiʻekiʻe. Hāʻawi kēia mau substrates i ka conductivity maikaʻi loa a me ke kūpaʻa, e hoʻolilo iā lākou i mea kūpono no nā polokalamu semiconductor e hiki mai ana. E hilinaʻi iā Semicera no ka pololei a me ka maikaʻi i nā mea holomua.


Huahana Huahana

Huahana Huahana

ʻO Semicera's 4 Inch N-type SiC Substrates i hana ʻia e hoʻokō i nā kūlana kūpono o ka ʻoihana semiconductor. Hāʻawi kēia mau substrates i kahi kumu hana kiʻekiʻe no kahi ākea o nā noi uila, e hāʻawi ana i ka conductivity kūikawā a me nā waiwai wela.

ʻO ka doping N-type o kēia mau substrates SiC e hoʻonui i kā lākou conductivity uila, e kūpono loa iā lākou no nā noi kiʻekiʻe a me nā alapine kiʻekiʻe. Hāʻawi kēia waiwai i ka hana maikaʻi o nā mea like me nā diodes, transistors, a me nā mea hoʻonui, kahi e hoʻemi ai i ka nalowale o ka ikehu.

Hoʻohana ʻo Semicera i nā kaʻina hana hou no ka hōʻoia ʻana i kēlā me kēia substrate e hōʻike i ka maikaʻi o ka ʻili a me ka lokahi. He mea koʻikoʻi kēia kikoʻī no nā noi i ka uila uila, nā mīkini microwave, a me nā ʻenehana ʻē aʻe e koi ana i ka hana hilinaʻi ma lalo o nā kūlana koʻikoʻi.

ʻO ka hoʻokomo ʻana i nā substrate SiC N-type ʻo Semicera i kāu laina hana ʻo ia ka pōmaikaʻi mai nā mea e hāʻawi ana i ka hoʻoheheʻe wela ʻoi aku ka maikaʻi a me ke kūpaʻa uila. He kūpono kēia mau substrate no ka hana ʻana i nā mea e pono ai ka lōʻihi a me ka pono, e like me nā ʻōnaehana hoʻololi mana a me nā mea hoʻonui RF.

Ma ke koho ʻana i kā Semicera's 4 Inch N-type SiC Substrates, ke kālele nei ʻoe i kahi huahana e hoʻohui i ka ʻepekema waiwai hou me ka hana akamai. Ke hoʻomau nei ʻo Semicera i ke alakaʻi ʻana i ka ʻoihana ma o ka hāʻawi ʻana i nā hāʻina e kākoʻo i ka hoʻomohala ʻana i nā ʻenehana semiconductor ʻokiʻoki, e hōʻoia ana i ka hana kiʻekiʻe a me ka hilinaʻi.

Nā mea

Paahana

Ka noiʻi

Dummy

Nā Kūlana Crystal

Polytype

4H

Ua hewa ka hoʻonohonoho ʻana o ka ʻili

<11-20 >4±0.15°

Nā Kūlana Uila

Dopant

n-ʻano Nitrogen

Kū'ē

0.015-0.025ohm·cm

Nā Kūlana Mechanical

Anawaena

150.0±0.2mm

mānoanoa

350±25 μm

Kūlana pālahalaha mua

[1-100]±5°

Ka lōʻihi pālahalaha mua

47.5±1.5mm

palahalaha lua

ʻAʻohe

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Kakaka

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

'Oka (AFM) mua (Si-maka)

Ra≤0.2nm (5μm*5μm)

Hoʻolālā

Micropipe mānoanoa

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Metala haumia

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

ʻAno o mua

Imua

Si

Hoʻopau ʻili

Si-maka CMP

Nā ʻāpana

≤60ea/wafer (nui≥0.3μm)

NA

Nā ʻōpala

≤5ea/mm. Ka lōʻihi huila ≤Diameter

ʻO ka lōʻihi huila≤2*Diameter

NA

ʻAlani ʻili/mau lua/ʻeleʻele/striations/ māwae/contamination

ʻAʻohe

NA

Nā ʻāpana lihi/indents/fracture/papa hex

ʻAʻohe

Nā wahi polytype

ʻAʻohe

ʻĀpana huila≤20%

ʻĀpana huila≤30%

Hōʻailona laser mua

ʻAʻohe

ʻAno o hope

Hoʻopau hope

C-maka CMP

Nā ʻōpala

≤5ea / mm, Ka lōʻihi huila≤2 * Anawaena

NA

Nā pōʻino hope (nā ʻāpana lihi/indents)

ʻAʻohe

ʻōkalakala kua

Ra≤0.2nm (5μm*5μm)

Hōʻailona laser hope

1 mm (mai ka lihi luna)

Kaulana

Kaulana

Chamfer

Hoʻopili ʻia

Hoʻopili ʻia

Epi-mākaukau me ka hoʻopaʻa ʻumeke

Puke cassette nui-wafer

*Nā memo: "NA" ʻo ia hoʻi, ʻaʻohe noi ʻO nā mea i ʻōlelo ʻole ʻia e pili ana i SEMI-STD.

tech_1_2_size
SiC wafers

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