SOI Wafers

ʻO ka wehewehe pōkole:

ʻO ka wafer SOI he ʻano like me ka sandwich me ʻekolu papa;E komo pū me ka papa luna (papa o ka mea hana), ka waena o ka ʻāpana oxygen i kanu ʻia (no ka insulating layer SiO2) a me ka substrate lalo (bulk silicon).Hana ʻia nā wafers SOI me ka hoʻohana ʻana i ke ʻano SIMOX a me ka ʻenehana hoʻopaʻa ʻana i ka wafer, kahi e hiki ai i nā papa mīkini ʻoi aku ka lahilahi a pololei, ka mānoanoa like ʻole a me ka haʻahaʻa haʻahaʻa haʻahaʻa.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

SOI Wafers(1)

Kahua noi

1. Kiʻekiʻe-wikiwiki hoʻohui kaapuni

2. Nā lako microwave

3. Kiʻekiʻe wela hoʻohui kaapuni

4. Nā mea hana mana

5. Haʻahaʻa mana hoʻohui kaapuni

6. MEMA

7. Kaapuni hoʻohui uila haʻahaʻa

'ikamu		Hoʻopaʻapaʻa
holookoa	Anawaena Wafer 晶圆尺寸(mm)	50/75/100/125/150/200mm±25um
	Kakaka 翘曲度(	<10um
	Nā ʻāpana 颗粒度(	0.3um<30ea
	Pāpā/Notch 定位边/定位槽	Paʻa a i ʻole Notch
	Hoʻokuʻu Edge 边缘去除(mm)	/
Papahana Mea Hana 器件层	ʻAno papa-mea hana/Dopant 器件层掺杂类型	N-ʻAno/P-ʻAno B/ P/ Sb / As
	ʻO ka hoʻonohonoho ʻana o nā mea hana 器件层晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Ka mānoanoa o ka papa hana 器件层厚度(um)	0.1~300um
	Ke kūʻē ʻana o ka papa hana 器件层电阻率(ohm•cm)	0.001~100,000 ohm-cm
	Nā ʻāpana ʻāpana-mea hana 器件层颗粒度(	<30ea@0.3
	TTV Lapa Mea Hana 器件层TTV(	<10um
	Hoʻopau ʻia ka papa hana 器件层表面处理	Hoʻomaʻamaʻa ʻia
PAHU	Kanu ʻia ʻo Thermal Oxide mānoanoa 埋氧层厚度(um)	50nm(500Å)~15um
Laena lima 衬底	ʻAno Wafer/Dopant 衬底层类型	N-ʻAno/P-ʻAno B/ P/ Sb / As
	Hana i ka Wafer Orientation 衬底晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Hana i ka Wafer Resistivity 衬底电阻率(ohm•cm)	0.001~100,000 ohm-cm
	Mānoanoa Wafer Mānoanoa 衬底厚度(um)	>100um
	Hoʻopau Wafer 衬底表面处理	Hoʻomaʻamaʻa ʻia
Hiki ke hoʻopilikino ʻia nā wafers SOI o nā kikoʻī kikoʻī e like me nā koi o ka mea kūʻai aku.