CVD SiC Coating Epitaxial Deposition I Epitaxy Reactor System

ʻO ka wehewehe pōkole:

Hāʻawi ʻo Semicera i kahi ākea o nā susceptors a me nā ʻāpana graphite i hoʻolālā ʻia no nā reactors epitaxy like ʻole.

Ma o ka launa pū ʻana me nā OEM alakaʻi i ka ʻoihana, ka ʻike loea nui, a me ka hiki ke hana kiʻekiʻe, hāʻawi ʻo Semicera i nā hoʻolālā kūpono e hoʻokō i nā koi kikoʻī o kāu noi. ʻO kā mākou kūpaʻa i ka maikaʻi e hōʻoia e loaʻa iā ʻoe nā hopena maikaʻi loa no kāu epitaxy reactor pono.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Hāʻawi kā mākou huiKa uhi ʻana o SiCkaʻina hana ma ka ʻili o ka graphite, keramika a me nā mea ʻē aʻe ma ke ʻano CVD, i hiki i nā kinoea kūikawā i loaʻa ke kalapona a me ke silika ke hana i ka wela kiʻekiʻe e loaʻa ai nā molekala Sic maʻemaʻe kiʻekiʻe, hiki ke waiho ʻia ma ka ʻili o nā mea i uhi ʻia e hana i kahiSiC pale paleno ka barela ʻano hy pnotic.

Nā hiʻohiʻona nui:

1 .High maemae SiC uhi graphite

2. ʻOi aku ka maikaʻi o ka wela a me ke kūlike o ka wela

3. MaikaʻiUa uhi ʻia ʻo SiC crystalno ka ili pahee

4. Kiʻekiʻe ka lōʻihi e kū'ē i ka hoʻomaʻemaʻe kemika

ʻO CVD Epitaxial Deposition ma ka Barrel Reactor

Nā kikoʻī nui oKa uhi ʻana o CVD-SIC

Nā Waiwai SiC-CVD
Hoʻokumu Crystal	Māhele FCC β
ʻO ka mānoanoa	g/cm ³	3.21
ʻoʻoleʻa	ʻO ka paʻakikī o Vickers	2500
Ka nui o ka palaoa	μm	2~10
Maemae Kemika	%	99.99995
Kaha Wela	J·kg-1 ·K-1	640
Mahana Sublimation	℃	2700
Ikaika Felexural	MPa (RT 4-point)	415
ʻO Young's Modulus	Gpa (4pt piko, 1300 ℃)	430
Hoʻonui wela (CTE)	10-6K-1	4.5
ʻO ke kau wela wela	(W/mK)	300