SiC pin trays no ka ICP etching kaʻina hana ma ka ʻoihana LED

SiC pin trays no ICP etching kaʻina hana ma ka ʻoihana LED Kiʻi Hōʻikeʻike

ʻO ka wehewehe pōkole:

ʻO Silicon carbide kahi ʻano seramika hou me ka hana kiʻekiʻe a me nā waiwai waiwai maikaʻi loa.Ma muli o nā hiʻohiʻona e like me ka ikaika kiʻekiʻe a me ka paʻakikī, ke kūpaʻa wela kiʻekiʻe, ka conductivity thermal nui a me ke kūpaʻa corrosion kemika, ʻaneʻane hiki i ka Silicon Carbide ke kū i nā ʻano kemika āpau.No laila, hoʻohana nui ʻia ʻo SiC i ka mining aila, kemika, nā mīkini a me ka ea, ʻoiai ʻo ka ikehu nuklea a me ka pūʻali koa i kā lākou koi kūikawā ma SIC.

Hiki iā mākou ke hoʻolālā a hana e like me kāu mau kiko kikoʻī me ka maikaʻi maikaʻi a me ka manawa hāʻawi kūpono.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Hōʻike huahana

Hāʻawi kā mākou hui i nā lawelawe kaʻina hana SiC coating ma ke ʻano CVD ma ka ʻili o ka graphite, ceramics a me nā mea ʻē aʻe, i hiki ai i nā kinoea kūikawā i loaʻa i ke kalapona a me ke silika ke hana i ke kiʻekiʻe kiʻekiʻe e loaʻa ai nā molekala SiC maʻemaʻe kiʻekiʻe, nā molekole i waiho ʻia ma ka ʻili o nā mea i uhi ʻia, e hana ana i ka papa pale SIC.

Nā hiʻohiʻona nui:

1. Kiʻekiʻe wela oxidation kū'ē:

ʻoi aku ka maikaʻi o ka pale ʻana i ka oxidation ke kiʻekiʻe ka mahana e like me 1600 C.

2. Maʻemaʻe kiʻekiʻe: hana ʻia e ka hoʻoheheʻe ʻana i ka mahu ma lalo o ke kūlana chlorination kiʻekiʻe.

3. Erosion kū'ē: kiʻekiʻe paakiki, paʻaʻiliʻili, maikaʻi particles.

4. Ke kū'ē i ka corrosion: acid, alkali, paʻakai a me nā mea hoʻoulu.

ʻO ka diski kālai ʻia ʻo Silicon carbide (2)

Nā kiko'ī nui o ka CVD-SIC Coating

Nā Waiwai SiC-CVD
Hoʻomoe Crystal	Māhele FCC β
ʻO ka mānoanoa	g/cm ³	3.21
ʻoʻoleʻa	ʻO ka paʻakikī Vickers	2500
Ka nui o ka palaoa	μm	2~10
Maemae Kemika	%	99.99995
Kaha Wela	J·kg-1 ·K-1	640
Mahana Sublimation	℃	2700
Ikaika Felexural	MPa (RT 4-point)	415
ʻO Young's Modulus	Gpa (4pt piko, 1300 ℃)	430
Hoʻonui wela (CTE)	10-6K-1	4.5
ʻO ke kau wela wela	(W/mK)	300