MAHELE/1
ʻO Crucible, paʻa hua a me ke apo alakaʻi ma SiC a me AIN i hoʻokahi kapuahi aniani i ulu ʻia e ke ʻano PVT
E like me ka mea i hōʻike ʻia ma ke Kiʻi 2 [1], i ka wā e hoʻohana ʻia ai ke ʻano o ka lawe ʻana i ka mahu kino (PVT) no ka hoʻomākaukau ʻana iā SiC, aia ka ʻano kristal ma kahi haʻahaʻa haʻahaʻa haʻahaʻa, ʻo ka SiC maka mea ma ka ʻāina wela kiʻekiʻe (ma luna o 2400).℃), a hoʻoheheʻe ʻia ka mea maka e hana ai i SiXCy (ʻoi aku ka nui me Si, SiC₂, Si₂C, etc.).Lawe ʻia ka ʻāpana mahu mai ka ʻāina wela kiʻekiʻe a hiki i ke aniani hua ma ka ʻāpana wela haʻahaʻa, fka hoʻoulu ʻana i ka nuclei hua, ka ulu ʻana, a me ka hana ʻana i nā kristal hoʻokahi.ʻO nā mea wela wela i hoʻohana ʻia i kēia kaʻina hana, e like me ka crucible, ke apo alakaʻi kahe, ka mea paʻa kristal hua, pono e kū i ka wela kiʻekiʻe a ʻaʻole e hoʻohaumia i nā mea maka SiC a me nā kristal hoʻokahi SiC.Pēlā nō, pono e kū'ē nā mea hoʻomehana i ka ulu ʻana o nā kristal hoʻokahi AlN i Al vapor, N.₂ʻino, a pono e loaʻa kahi mahana eutectic kiʻekiʻe (me AlN) e hoʻopōkole i ka manawa hoʻomākaukau aniani.
Ua ʻike ʻia ʻo ka SiC[2-5] a me AlN[2-3] i hoʻomākaukau ʻia eUa uhi ʻia ʻo TaCʻOi aku ka maʻemaʻe o nā mea kahua wela graphite, ʻaneʻane ʻaʻohe kalapona (oxygen, nitrogen) a me nā mea haumia ʻē aʻe, ka liʻiliʻi o nā hemahema o ka lihi, ka liʻiliʻi o ka resistivity i kēlā me kēia wahi, a ua hoʻemi nui ʻia ka micropore density a me ka etching pit density (ma hope o KOH etching), a me ka maikaʻi aniani. ua hoʻomaikaʻi nui ʻia.Kahi mea hou aʻe,ʻO ke kīʻaha TaCʻaneʻane ʻaʻole ka nui o ka pohō kaumaha, ʻaʻohe mea luku, hiki ke hana hou ʻia (ke ola a hiki i 200h), hiki ke hoʻomaikaʻi i ka hoʻomau a me ka pono o ia hoʻomākaukau aniani hoʻokahi.
FIG.2. (a) kiʻi kiʻi kiʻi o SiC hoʻokahi kristal ingot e ulu ana ma ke ʻano PVT
(b) lunaUa uhi ʻia ʻo TaCpūʻulu hua (me ka hua SiC)
(c)apo alakai graphite i uhiia e TAC
MAHELE/2
MOCVD GaN epitaxial layer ulu mea hoʻomehana
E like me ka mea i hōʻike ʻia ma ke Kiʻi 3 (a), ʻo MOCVD GaN ka ulu ʻana he ʻenehana hoʻoheheʻe kemika me ka hoʻohana ʻana i ka hopena decomposition organometrical e ulu i nā kiʻiʻoniʻoni lahilahi e ka ulu ʻana o ka epitaxial vapor.ʻO ka pololei o ka mahana a me ka like ʻole i loko o ka lua e lilo ai ka mea hoʻomehana i mea koʻikoʻi nui o nā lako MOCVD.Inā hiki ke hoʻomaʻamaʻa koke ʻia ka substrate no ka manawa lōʻihi (ma lalo o ka hoʻomaha ʻana), ʻo ke kūpaʻa i ke kiʻekiʻe kiʻekiʻe (kū kūʻē i ke kinoea corrosion) a me ka maʻemaʻe o ke kiʻiʻoniʻoni e pili pono i ka maikaʻi o ka waiho ʻana o ke kiʻiʻoniʻoni, ka mānoanoa o ka mānoanoa. a me ka hana o ka chip.
I mea e hoʻomaikaʻi ai i ka hana a me ka hana hou ʻana o ka mea wela i ka ʻōnaehana ulu MOCVD GaN,i uhi ʻia me ka TACUa hoʻokomo maikaʻi ʻia ka mea hoʻomehana graphite.Hoʻohālikelike ʻia me ka papa epitaxial GaN i ulu ʻia e ka mea hoʻomehana maʻamau (me ka hoʻohana ʻana i ka uhi pBN), ʻo ka papa epitaxial GaN i ulu ʻia e ka mea hoʻomehana TaC ʻaneʻane like ke ʻano aniani, ka like ʻana o ka mānoanoa, nā hemahema intrinsic, ka doping haumia a me ka contamination.Eia hou, kaka uhi ʻana o TaChe haʻahaʻa haʻahaʻa haʻahaʻa a me ka haʻahaʻa haʻahaʻa emissivity, hiki ke hoʻomaikaʻi i ka maikaʻi a me ka kūlike o ka mea hoʻomehana, a laila e hōʻemi ana i ka hoʻohana ʻana i ka mana a me ka wela.Hiki ke hoʻoponopono ʻia ka porosity o ka uhi ʻana ma o ka hoʻomalu ʻana i nā ʻāpana kaʻina e hoʻomaikaʻi hou i nā ʻano radiation o ka mea hoʻomehana a hoʻonui i kona ola lawelawe [5].Hana kēia mau mea maikaʻiUa uhi ʻia ʻo TaCgraphite heaters he koho maikaʻi loa no nā ʻōnaehana ulu MOCVD GaN.
FIG.3. (a) kiʻi kiʻi kiʻi o ka mea MOCVD no ka ulu epitaxial GaN
(b) Hoʻokomo ʻia ka mea hoʻomehana graphite TAC-coated i loko o ka hoʻonohonoho MOCVD, me ka ʻole o ke kumu a me ka bracket (ke kiʻi e hōʻike ana i ke kumu a me ka bracket i ka hoʻomehana)
(c) TAC-coated graphite heater ma hope o 17 GaN epitaxial ulu.[6]
MAHELE/3
Ka mea i uhi ʻia no ka epitaxy (wafer carrier)
He mea koʻikoʻi ka mea lawe wafer no ka hoʻomākaukau ʻana o SiC, AlN, GaN a me nā ʻāpana semiconductor papa ʻekolu a me ka ulu ʻana o ka wafer epitaxial.ʻO ka hapa nui o nā mea lawe wafer i hana ʻia me ka graphite a uhi ʻia me ka uhi SiC e pale aku i ka corrosion mai nā kinoea kaʻina hana, me kahi pae wela epitaxial o 1100 a 1600.°C, a he koʻikoʻi ko ka pale ʻana i ka corrosion o ka uhi pale i ke ola o ka mea lawe wafer.Hōʻike nā hualoaʻa he 6 manawa ʻoi aku ka lohi o ka corrosion o TaC ma mua o SiC i ka ammonia wela kiʻekiʻe.I ka hydrogen wela wela, ʻoi aku ka nui o ka corrosion ma mua o 10 mau manawa lohi ma mua o SiC.
Ua hōʻoia ʻia e nā hoʻokolohua e hōʻike ana nā pā i uhi ʻia me TaC i ka hoʻohālikelike maikaʻi ʻana i ke kaʻina polū GaN MOCVD a ʻaʻole hoʻokomo i nā mea haumia.Ma hope o ka hoʻololi ʻana i nā kaʻina hana, nā alakaʻi i ulu me ka hoʻohana ʻana i nā mea lawe TaC e hōʻike i ka hana like a me ka lokahi e like me nā mea lawe SiC maʻamau.No laila, ʻoi aku ka maikaʻi o ke ola lawelawe o nā pallets TAC-coated ma mua o ka ʻīnika pōhaku ʻole aUa uhi ʻia ʻo SiCgraphite pallets.
Ka manawa hoʻouna: Mar-05-2024