【 Hōʻike hōʻuluʻulu 】 I kēia manawa C, N, B a me nā mea ʻē aʻe non-oxide kiʻekiʻe-tech refractory maka, ua hoʻopaʻa ʻia ke kaomi ea.kalapona kalaponahe ākea a waiwai, a hiki ke ʻōlelo ʻia he emery a i ʻole ke one refractory.Maʻemaʻekalapona kalaponahe aniani moakaka kala ole.No laila he aha ke ʻano o ke ʻano a me nā ʻano okalapona kalapona?
ʻO ka hoʻolālā waiwai o ke kaomi lewa i hoʻopaʻa ʻiakalapona kalapona:
Ua sintered ke kaomi lewakalapona kalaponahoʻohana ʻia i ka ʻoihana he melemele māmā, ʻōmaʻomaʻo, uliuli a ʻeleʻele e like me ke ʻano a me ka ʻike o nā mea haumia, a ʻokoʻa ka maʻemaʻe a ʻokoʻa ka ʻike.Hoʻokaʻawale ʻia ke ʻano o ke aniani carbide silika i ʻeono huaʻōlelo a i ʻole he daimana ʻano plutonium a me cubic plutonium-sic.Hoʻokumu ka Plutonium-sic i nā ʻano hoʻololi like ʻole ma muli o ke ʻano hoʻopaʻa ʻokoʻa o nā ʻātoma kalapona a me ke silikona i loko o ka hale aniani, a ʻoi aku ma mua o 70 mau ʻano deformation i loaʻa.Hoʻololi ka beta-SIC i ka alpha-SIC ma luna o 2100. Hoʻomaʻemaʻe ʻia ke kaʻina hana ʻoihana o ka silicon carbide me ke one quartz kiʻekiʻe a me ka coke petroleum i loko o kahi umu kūʻē.Hoʻopiʻi ʻia nā poloka silicon carbide i hoʻomaʻemaʻe ʻia, hoʻomaʻemaʻe acid-base, hoʻokaʻawale magnetic, kānana a i ʻole koho wai e hana i nā ʻano huahana nui.
Nā hiʻohiʻona waiwai o ke kaomi lewacarbide silika sintered:
He kūpaʻa kemika maikaʻi ka Silicon carbide, thermal conductivity, thermal expansion coefficient, wear resistance, no laila, ma waho aʻe o ka hoʻohana abrasive, he nui nā hoʻohana: No ka laʻana, ua uhi ʻia ka pauka silicon carbide ma ka paia o loko o ka turbine impeller a i ʻole cylinder block me kahi kaʻina hana kūikawā, hiki ke hoʻomaikaʻi i ka pale lole a hoʻonui i ke ola o 1 a 2 mau manawa.Hana ʻia me ka wela, ka liʻiliʻi, ke kaumaha māmā, ka ikaika kiʻekiʻe o nā mea refractory kiʻekiʻe, ʻoi aku ka maikaʻi o ka ikehu.ʻO ka carbide silicon haʻahaʻa haʻahaʻa (me kahi o 85% SiC) he deoxidizer maikaʻi loa no ka hoʻonui ʻana i ka wikiwiki o ka hana kila a me ka maʻalahi o ka hoʻopaʻa ʻana i ka haku mele e hoʻomaikaʻi i ka maikaʻi o ke kila.Eia kekahi, hoʻohana nui ʻia ke kaomi ʻana o ka atmospheric sintered silicon carbide i ka hana ʻana i nā ʻāpana uila o nā koʻokoʻo kalapona silika.
Paʻakikī loa ka Silicon carbide.ʻO 9.5 ka paʻakikī o Morse, ʻelua wale nō i ka daimana paʻakikī o ka honua (10), he semiconductor me ka conductivity thermal maikaʻi loa, hiki ke pale aku i ka hoʻomake ʻana i nā wela kiʻekiʻe.ʻO ka silikoni carbide he 70 mau ʻano crystalline.ʻO ka plutonium-silicon carbide kahi isomer maʻamau i hana ʻia ma nā mahana ma luna o 2000 a he ʻano hexagonal crystalline (e like me ka wurtzite).ʻO ka carbide silika i hoʻopaʻa ʻia ma lalo o ke kaomi lewa
Noi okalapona kalaponai ka ʻoihana semiconductor
ʻO ke kaulahao ʻoihana semiconductor silicon carbide ka nui o ka pauka maʻemaʻe kiʻekiʻe o ka silicon carbide, ka substrate kristal hoʻokahi, ka pepa epitaxial, nā ʻāpana mana, ka ʻeke module a me nā noi terminal.
1. ʻO ka pahu aniani hoʻokahi ʻO ka substrate kristal hoʻokahi he mea kākoʻo semiconductor, mea conductive a me ka substrate ulu epitaxial.I kēia manawa, ʻo ke ʻano o ka ulu ʻana o ka kristal SiC hoʻokahi e pili ana i ke ʻano o ka hoʻololi ʻana i ka mahu kino (PVT method), ke ʻano hana wai (LPE method), a me ke ʻano hoʻoheheʻe kemika kiʻekiʻe (HTCVD method).ʻO ka carbide silika i hoʻopaʻa ʻia ma lalo o ke kaomi lewa
2. Pepa Epitaxial Silicon carbide epitaxial sheet, silicon carbide sheet, single crystal film (epitaxial layer) me ke kuhikuhi like me ka substrate crystal i loaʻa kekahi mau koi no ka silicon carbide substrate.Ma nā noi kūpono, ʻaneʻane hana ʻia nā mea hana semiconductor ākea ākea i ka papa epitaxial, a hoʻohana wale ʻia ka chip silicon ma ke ʻano he substrate, me ka substrate o ka papa epitaxial GaN.
3. High-purity silicon carbide pauda High-purity silicon carbide pauda ka mea maka no ka ulu ʻana o ka silicon carbide hoʻokahi aniani ma ke ʻano PVT, a ʻo ka maʻemaʻe o ka huahana e pili pono i ka ulu ulu a me nā hiʻohiʻona uila o ka silicon carbide single crystal.
4. ʻO ka mana mana he mana ākea ākea i hanaʻia me ka silicon carbide material, nona nāʻano o ka wela kiʻekiʻe, ke alapine kiʻekiʻe a me ka hana kiʻekiʻe.E like me ke ʻano hana o ka hāmeʻa, ʻo ka mea hoʻolako mana ʻo SiC ka nui o kahi diode mana a me kahi pahu hoʻololi mana.
5. Terminal I loko o nā noi semiconductor o nā hanauna ʻekolu, ʻoi aku ka maikaʻi o nā semiconductor silicon carbide no ka hoʻohui ʻana i nā semiconductor gallium nitride.Ma muli o ke kiʻekiʻe o ka hoʻololi ʻana, nā hiʻohiʻona haʻahaʻa haʻahaʻa, nā māmā a me nā pono ʻē aʻe o nā mea SiC, ke hoʻomau nei ka koi o ka ʻoihana i lalo, a aia kahi ʻano e hoʻololi i nā mea SiO2.
Ka manawa hoʻouna: Oct-16-2023