Semicera Semiconductor hoʻolālā e hoʻonui i ka hana ʻana o nā mea koʻikoʻi no nā lako hana semiconductor ma ka honua. Ma ka 2027, manaʻo mākou e hoʻokumu i kahi hale hana hou 20,000 square square me ka huina kālā he 70 miliona USD. ʻO kekahi o kā mākou mea nui, kaka mea lawe wafer silika carbide (SiC)., i ʻike ʻia he susceptor, ua ʻike i nā holomua nui. No laila, he aha kēia pā e paʻa ai nā wafers?
I ke kaʻina hana wafer, kūkulu ʻia nā papa epitaxial ma luna o kekahi mau substrates wafer e hana i nā mea hana. No ka laʻana, ua hoʻomākaukau ʻia nā papa epitaxial GaAs ma luna o nā substrate silika no nā mea LED, ua ulu ʻia nā papa epitaxial SiC ma nā substrate SiC conductive no nā noi mana e like me SBDs a me MOSFETs, a ua kūkulu ʻia nā papa epitaxial GaN ma nā substrate SiC semi-insulating no nā noi RF e like me HEMTs. . Ke hilinaʻi nui nei kēia kaʻina hanaka waiho ʻana o ka mahu (CVD)mea lako.
I nā lako CVD, ʻaʻole hiki ke kau pololei ʻia nā substrate ma luna o ka metala a i ʻole kahi kumu maʻalahi no ka waiho ʻana o ka epitaxial ma muli o nā ʻano like ʻole e like me ke kahe ʻana o ke kinoea (horizontal, vertical), wela, kaomi, kūpaʻa, a me ka ʻino. No laila, hoʻohana ʻia kahi susceptor e kau i ka substrate ma luna, hiki i ka epitaxial deposition me ka hoʻohana ʻana i ka ʻenehana CVD. ʻO kēia susceptor kaSusceptor graphite i uhi ʻia ʻo SiC.
Nā mea hoʻopili graphite i uhi ʻia ʻo SiC hoʻohana maʻamau i nā mea hana Metal-Organic Chemical Vapor Deposition (MOCVD) e kākoʻo a hoʻomehana i nā substrates hoʻokahi-crystal. ʻO ke kūpaʻa wela a me ke kūlike o Nā mea hoʻopili graphite i uhi ʻia ʻo SiCHe mea koʻikoʻi ia no ka ulu ʻana o nā mea epitaxial, e hoʻolilo iā lākou i mea koʻikoʻi o nā lako MOCVD (alakaʻi i nā ʻoihana lako MOCVD e like me Veeco a me Aixtron). I kēia manawa, hoʻohana nui ʻia ka ʻenehana MOCVD i ka ulu epitaxial o nā kiʻiʻoniʻoni GaN no nā LED polū ma muli o kona maʻalahi, ka ulu ʻana o ka ulu ʻana, a me ka maʻemaʻe kiʻekiʻe. Ma ke ʻano he ʻāpana koʻikoʻi o ka reactor MOCVD, kasusceptor no ka ulu epitaxial kiʻiʻoniʻoni GaNpono e loaʻa i ke kūpaʻa wela kiʻekiʻe, ka conductivity wela like ʻole, ke kūpaʻa kemika, a me ke kūpaʻa haʻalulu ikaika. Hoʻokō pono ka Graphite i kēia mau koi.
Ma ke ʻano he mea nui o nā lako MOCVD, kākoʻo ka susceptor graphite a hoʻomehana i nā substrates hoʻokahi-crystal, e pili pono ana i ka like a me ka maʻemaʻe o nā mea kiʻiʻoniʻoni. Hoʻopili pololei kona maikaʻi i ka hoʻomākaukau ʻana i nā wafers epitaxial. Eia nō naʻe, me ka hoʻonui ʻia o ka hoʻohana ʻana a me nā ʻano hana hana like ʻole, ua maʻalahi nā graphite susceptors a ua manaʻo ʻia he mau mea hoʻohana.
Nā mea mālama MOCVDPono e loaʻa i kekahi mau hiʻohiʻona uhi e hoʻokō i nā koi aʻe:
- -Ka uhi maikaʻi:Pono ka uhi e uhi pono i ka graphite susceptor me ke kiʻekiʻe kiʻekiʻe e pale ai i ka corrosion i loko o kahi kino kinoea corrosive.
- -Ka ikaika pili kiʻekiʻe:Pono ka uhi e hoʻopaʻa ikaika i ka graphite susceptor, me ka pale ʻana i nā pōʻai wela kiʻekiʻe a me ka haʻahaʻa me ka ʻole o ka ʻili.
- -Paʻa kemika:Pono e paʻa kemika ka uhi ʻana e pale aku i ka hāʻule ʻole i ka ea wela a me ka corrosive.
ʻO SiC, me kona pale ʻana i ka corrosion, kiʻekiʻe thermal conductivity, thermal shock resistance, a me ka paʻa kemika kiʻekiʻe, hana maikaʻi i ka epitaxial environment GaN. Hoʻohui ʻia, ua like ke koena hoʻonui wela o SiC me ka graphite, e hana ana iā SiC ka mea i makemake ʻia no nā graphite susceptor coatings.
I kēia manawa, loaʻa nā ʻano maʻamau o SiC me 3C, 4H, a me 6H, kūpono kēlā me kēia no nā noi like ʻole. No ka laʻana, hiki i ka 4H-SiC ke hana i nā mea mana kiʻekiʻe, 6H-SiC paʻa a hoʻohana ʻia no nā mea optoelectronic, ʻoiai ʻo 3C-SiC e like me ke ʻano me GaN, e kūpono ana ia no ka hana ʻana o ka papa epitaxial GaN a me nā polokalamu SiC-GaN RF. Hoʻohana nui ʻia ʻo 3C-SiC, ʻike ʻia ʻo β-SiC, ma ke ʻano he kiʻiʻoniʻoni a me nā mea hoʻonaninani, e lilo ia i mea kumu mua no ka uhi ʻana.
Aia nā ʻano hana like ʻole e hoʻomākaukau aiʻO nā uhi SiC, me ka sol-gel, ka hoʻokomo ʻana, ka palaki ʻana, ka pāpaʻi ʻana i ka plasma, ka hoʻoheheʻe ʻana o ka mahu (CVR), a me ka hoʻoheheʻe ʻana i ka mahu (CVD).
Ma waena o kēia mau mea, ʻo ke ʻano hoʻopili he kaʻina sintering solid-phase kiʻekiʻe. Ma ke kau ʻana i ka substrate graphite i loko o ka pauka hoʻokomo ʻia i loko o ka pauka Si a me C a me ka sintering i loko o kahi kaiaea inert, ua puka kahi uhi SiC ma ka substrate graphite. He maʻalahi kēia ʻano, a pili maikaʻi ka uhi ʻana me ka substrate. Eia nō naʻe, ʻaʻohe kūlike o ka mānoanoa o ka uhi a loaʻa paha nā pores, e alakaʻi ana i ka pale ʻana i ka oxidation.
ʻO ke ʻano hoʻoheheʻe ʻana
ʻO ke ʻano hoʻoheheʻe ʻia e pili ana i ka pīpī ʻana i nā mea wai maka ma luna o ka ʻili o ka substrate graphite a hoʻōla iā lākou ma kahi mahana kikoʻī e hana i kahi uhi. He mea maʻalahi kēia ʻano a me ke kumu kūʻai akā hopena i ka hoʻopaʻa haʻahaʻa ma waena o ka uhi ʻana a me ka substrate, ka like ʻole o ka uhi ʻana, a me nā ʻili lahilahi me ka haʻahaʻa haʻahaʻa haʻahaʻa, e koi ana i nā ʻano kōkua.
ʻO ke ʻano hoʻoheheʻe ʻana o ka Ion Beam
Hoʻohana ka hoʻoheheʻe ʻana i ka lāʻau Ion i kahi pū kukui ion e pīpī i nā mea i hoʻoheheʻe ʻia a i ʻole ʻāpana hoʻoheheʻe ʻia ma luna o ka ʻili o ka substrate graphite, e hana ana i kahi uhi ma luna o ka paʻa. He mea maʻalahi kēia ʻano a hana i nā uhi SiC paʻa. Eia nō naʻe, ʻoi aku ka maikaʻi o ka pale ʻana o ka oxidation i nā ʻāpana lahilahi, hoʻohana pinepine ʻia no nā ʻāpana hoʻohui SiC e hoʻomaikaʻi i ka maikaʻi.
Hana Sol-Gel
ʻO ke ʻano o ka sol-gel ka hoʻomākaukau ʻana i kahi ʻano like ʻole, ʻike maopopo, uhi i ka ʻili o ka substrate, a loaʻa ka uhi ma hope o ka maloʻo ʻana a me ka sintering. He mea maʻalahi kēia ʻano a me ke kumu kūʻai akā loaʻa i nā uhi me ka haʻahaʻa haʻahaʻa haʻahaʻa haʻahaʻa haʻahaʻa a me ka maʻalahi i ka haki ʻana, e kaupalena ana i kāna noi ākea.
ʻO ka hoʻohenehene ʻana i ka mahu (CVR)
Hoʻohana ʻo CVR i ka pauka Si a me SiO2 i nā wela kiʻekiʻe e hoʻohua ai i ka mahu SiO, e hoʻopili me ka substrate mea kalapona e hana i kahi uhi SiC. ʻO ka hopena o ka uhi ʻana o SiC e hoʻopaʻa paʻa me ka substrate, akā pono ke kaʻina hana i nā mahana hopena kiʻekiʻe a me nā kumukūʻai.
Hoʻomoe ʻana i ka mahu (CVD)
ʻO CVD ka ʻenehana mua no ka hoʻomākaukau ʻana i nā uhi SiC. Hoʻopili ia i nā hopena kinoea ma ka ʻili o ka substrate graphite, kahi e hana ai nā mea maka i nā hopena kino a me ke kemika, e waiho ana ma ke ʻano he uhi SiC. Hoʻopuka ʻo CVD i nā pale SiC i hoʻopaʻa paʻa ʻia e hoʻomaikaʻi i ka hoʻoneʻe ʻana o ka substrate a me ke kūʻē ablation. Eia nō naʻe, he lōʻihi nā manawa waiho ʻana o CVD a hiki ke komo i nā kinoea ʻona.
Kūlana Mākeke
I ka SiC-coated graphite susceptor market, he alakaʻi koʻikoʻi nā mea hana haole a me ka māhele mākeke kiʻekiʻe. Ua lanakila ʻo Semicera i nā ʻenehana koʻikoʻi no ka ulu ʻana o ka coating SiC ma luna o nā substrates graphite, e hāʻawi ana i nā hopena e pili ana i ka conductivity thermal, elastic modulus, stiffness, lattice defects, a me nā pilikia maikaʻi ʻē aʻe, e hoʻokō pono ana i nā pono lako MOCVD.
Manao e hiki mai ana
Ke ulu wikiwiki nei ka ʻoihana semiconductor o Kina, me ka hoʻonui ʻana i ka localization o nā lako epitaxial MOCVD a me ka hoʻonui ʻana i nā noi. Manaʻo ʻia e ulu wikiwiki ka mākeke graphite susceptor SiC-coated.
Ka hopena
Ma ke ʻano he mea koʻikoʻi i nā lako semiconductor pūhui, ʻo ka hoʻomaʻamaʻa ʻana i ka ʻenehana hana koʻikoʻi a me ka ʻimi ʻana i nā susceptors graphite i uhi ʻia ʻo SiC he mea koʻikoʻi no ka ʻoihana semiconductor Kina. Ke ulu nui nei ka māla graphite susceptor home SiC-coated, me ka maikaʻi o ka huahana a hiki i nā pae honua.Semicerake hoʻoikaika nei e lilo i mea hoʻolako alakaʻi ma kēia kahua.
Ka manawa hoʻouna: Jul-17-2024