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Mālama mākou i nā tolerances pili loa i ka wā e noi ai i kaKa uhi ʻana o SiC, me ka hoʻohana ʻana i ka mīkini kikoʻī kiʻekiʻe e hōʻoia i kahi ʻano ʻike susceptor like.Hoʻopuka pū mākou i nā mea me nā waiwai pale uila kūpono no ka hoʻohana ʻana i nā ʻōnaehana inductively.Hele mai nā ʻāpana a pau me ka palapala hoʻokō maʻemaʻe a me ka dimensional.
Hāʻawi kā mākou huiKa uhi ʻana o SiCkaʻina hana ma ke ʻano CVD ma ka ʻili o ka graphite, ceramics a me nā mea ʻē aʻe, no laila e hana nā kinoea kūikawā i loaʻa i ke kalapona a me ke silikoni i ka wela kiʻekiʻe e loaʻa ai nā molekala SiC maʻemaʻe kiʻekiʻe, nā molekala i waiho ʻia ma ka ʻili o nā mea i uhi ʻia, e hana ana i ka papa pale SIC.Hoʻopili paʻa ʻia ka SIC i hoʻokumu ʻia i ka base graphite, e hāʻawi ana i ka graphite base i nā waiwai kūikawā, pēlā e hana ai i ka ʻili o ka graphite compact, Porosity-free, kiʻekiʻe kiʻekiʻe o ka wela, ka pale ʻana i ka corrosion a me ka pale oxidation.
Hāʻawi ke kaʻina hana CVD i ka maʻemaʻe kiʻekiʻe a me ka nui o ka manaʻoKa uhi ʻana o SiCme ka porosity ole.ʻO ka mea ʻē aʻe, ʻoiai he paʻakikī loa ka carbide silika, hiki ke hoʻomaʻamaʻa ʻia i ka ʻili e like me ke aniani.ʻO ka uhi ʻana o ka CVD silicon carbide (SiC).hāʻawi i kekahi mau pono e pili ana i ka ʻili maʻemaʻe ultra-kiʻekiʻe a me ka lōʻihi o ka lole.Ma muli o ka hana nui o nā huahana i uhi ʻia i loko o ka vacuum kiʻekiʻe a me ke kūlana wela kiʻekiʻe, kūpono lākou no nā noi i ka ʻoihana semiconductor a me nā wahi ultra-maʻemaʻe ʻē aʻe.Hāʻawi pū mākou i nā huahana pyrolytic graphite (PG).
Nā hiʻohiʻona nui
1. Kiʻekiʻe wela oxidation kū'ē:
ʻoi aku ka maikaʻi o ka pale ʻana i ka oxidation ke kiʻekiʻe ka mahana e like me 1600 C.
2. Maʻemaʻe kiʻekiʻe: hana ʻia e ka hoʻoheheʻe ʻana i ka mahu ma lalo o ke kūlana chlorination kiʻekiʻe.
3. Erosion kū'ē: kiʻekiʻe paakiki, paʻaʻiliʻili, maikaʻi particles.
4. Ke kū'ē i ka corrosion: acid, alkali, paʻakai a me nā mea hoʻoulu.
ʻO nā kikoʻī nui o ka CVD-SIC Coatings
| SiC-CVD | ||
| ʻO ka mānoanoa | (g/cc) | 3.21 |
| Ka ikaika wiliwili | (Mpa) | 470 |
| Hoʻonui wela | (10-6/K) | 4 |
| ʻO ke kau wela wela | (W/mK) | 300 |
Palapala noi
Ua hoʻohana ʻia ka panina silicon carbide CVD i nā ʻoihana semiconductor i kēia manawa, e like me ka MOCVD tray, RTP a me ke keʻena etching oxide mai ka silicon nitride i ke kūpaʻa haʻalulu wela a hiki ke kū i ka plasma ikehu kiʻekiʻe.
- Hoʻohana nui ʻia ka carbide silicon i ka semiconductor a me ka uhi.
Palapala noi
Hiki ke hoolako:
10000 ʻāpana / ʻāpana i kēlā me kēia mahina
Puke a me ka lawe ʻana:
Hoʻopili: Kūʻai maʻamau & ikaika
ʻeke poli + pahu + pahu pahu + pallet
Awa:
Ningbo/Shenzhen/Shanghai
Ka manawa o waena o ka hoʻomaka a i ka wā pau:
| Nui (Nā ʻāpana) | 1 – 1000 | >1000 |
| Est.Manawa(lā) | 15 | E kūkākūkā ʻia |
