ʻO SemiceraNa hoe SiCua hoʻolālā ʻia no ka liʻiliʻi o ka hoʻonui ʻana i ka wela, e hāʻawi ana i ke kūpaʻa a me ka pololei i nā kaʻina kahi e koʻikoʻi ai ka pololei o ka dimensional. ʻO kēia ka mea kūpono iā lākou no nā noi ma kahiwafersHoʻopili ʻia i nā pōʻai hoʻomehana a me ka hoʻomaha ʻana, ʻoiai ke mālama nei ka wafer waʻa i kona kūpaʻa ʻana, e hōʻoia ana i ka hana mau.
Hoʻokomo ʻia ʻo Semiceranā hoe hoʻopuehu silikai loko o kāu laina hana e hoʻonui i ka hilinaʻi o kāu kaʻina hana, mahalo i kā lākou ʻoihana wela a me nā mea kemika. He kūpono kēia mau hoe no ka diffusion, oxidation, a me nā kaʻina hana annealing, e hōʻoia i ka mālama ʻia ʻana o nā wafers me ka mālama a me ka pololei i kēlā me kēia pae.
Aia ka hana hou i ke kumu o Semicerahoe SiChoʻolālā. Hoʻopili ʻia kēia mau hoe e hoʻokomo pono i nā lako semiconductor e kū nei, e hāʻawi ana i ka maikaʻi o ka lawelawe ʻana. ʻO ka māmā māmā a me ka hoʻolālā ergonomic ʻaʻole e hoʻomaikaʻi wale i ka halihali wafer akā e hōʻemi hoʻi i ka downtime hana, e hopena i ka hana streamlined.
| Nā waiwai kino o Recrystallized Silicon Carbide | |
| Waiwai | Waiwai maʻamau |
| Mahana hana (°C) | 1600°C (me ka oxygen), 1700°C (hoemi kaiapuni) |
| maʻiʻo SiC | > 99.96% |
| Maikaʻi Si manuahi | < 0.1% |
| ʻAno nui | 2.60-2.70 g/cm3 |
| ʻIke ʻia ka porosity | < 16% |
| Ka ikaika hoʻoemi | > 600 MPa |
| Ka ikaika kulou anu | 80-90 MPa (20°C) |
| Ka ikaika piko wela | 90-100 MPa (1400°C) |
| Hoʻonui wela @1500°C | 4.70 10-6/°C |
| ʻO ka wela wela @1200°C | 23 W/m•K |
| Modulus elastic | 240 GPa |
| Ke kū'ē i ka ha'alulu wela | Maikaʻi loa |
