wehewehe
Mālama mākou i nā tolerances pili loa i ka wā e noi ai i kaKa uhi ʻana o SiC, me ka hoʻohana ʻana i ka mīkini kikoʻī kiʻekiʻe e hōʻoia i kahi ʻano ʻike susceptor like. Hoʻopuka pū mākou i nā mea me nā waiwai pale uila kūpono no ka hoʻohana ʻana i nā ʻōnaehana inductively. Hele mai nā ʻāpana a pau me ka palapala hoʻokō maʻemaʻe a me ka dimensional.
Hāʻawi kā mākou huiKa uhi ʻana o SiCkaʻina hana ma ke ʻano CVD ma ka ʻili o ka graphite, ceramics a me nā mea ʻē aʻe, no laila e hana nā kinoea kūikawā i loaʻa ke kalapona a me ke silika i ke kiʻekiʻe kiʻekiʻe e loaʻa ai nā molekala SiC maʻemaʻe kiʻekiʻe, nā molekala i waiho ʻia ma ka ʻili o nā mea i uhi ʻia, e hana ana i ka papa pale SIC. Hoʻopili paʻa ʻia ka SIC i hoʻokumu ʻia i ka base graphite, e hāʻawi ana i ka graphite base i nā waiwai kūikawā, pēlā e hana ai i ka ʻili o ka graphite compact, Porosity-free, kiʻekiʻe wela ke kū ʻana, ka pale ʻana i ka corrosion a me ka pale oxidation.
Hāʻawi ke kaʻina hana CVD i ka maʻemaʻe kiʻekiʻe a me ka nui o ka manaʻoKa uhi ʻana o SiCme ka porosity ole. ʻO ka mea ʻē aʻe, ʻoiai he paʻakikī loa ka carbide silika, hiki ke hoʻomaʻamaʻa ʻia i ka ʻili e like me ke aniani.ʻO ka uhi ʻana o ka carbide silikon CVD (SiC).hāʻawi i kekahi mau pono e pili ana i ka ʻili maʻemaʻe ultra-kiʻekiʻe a me ka lōʻihi o ka lole. Ma muli o ka hana nui o nā huahana i uhi ʻia i ka vacuum kiʻekiʻe a me ke kūlana wela kiʻekiʻe, kūpono lākou no nā noi i ka ʻoihana semiconductor a me nā wahi ultra-maʻemaʻe. Hāʻawi pū mākou i nā huahana pyrolytic graphite (PG).
Nā hiʻohiʻona nui
1. Kiʻekiʻe wela oxidation kū'ē:
ʻoi aku ka maikaʻi o ka pale ʻana i ka oxidation ke kiʻekiʻe ka mahana e like me 1600 C.
2. Maʻemaʻe kiʻekiʻe: hana ʻia e ka hoʻoheheʻe ʻana i ka mahu ma lalo o ke kūlana chlorination kiʻekiʻe.
3. Erosion kū'ē: kiʻekiʻe paakiki, paʻaʻiliʻili, maikaʻi particles.
4. Ke kū'ē i ka corrosion: acid, alkali, paʻakai a me nā mea hoʻoulu.
Nā Manaʻo Nui o nā Coatings CVD-SIC
SiC-CVD | ||
ʻO ka mānoanoa | (g/cc) | 3.21 |
Ka ikaika wiliwili | (Mpa) | 470 |
Hoʻonui wela | (10-6/K) | 4 |
ʻO ke kau wela wela | (W/mK) | 300 |
Palapala noi
Ua hoʻohana ʻia ka uhi ʻana o ka silicon carbide CVD i nā ʻoihana semiconductor, e like me ka MOCVD tray, RTP a me ke keʻena etching oxide mai ka silicon nitride i ka haʻalulu wela nui a hiki ke kū i ka plasma ikehu kiʻekiʻe.
-Hoʻohana nui ʻia ka silicon carbide i ka semiconductor a me ka uhi.
Palapala noi
Hiki ke hoolako:
10000 ʻāpana / ʻāpana i kēlā me kēia mahina
Puke a me ka lawe ʻana:
Hoʻopili: Kūʻai maʻamau & ikaika
ʻeke poli + pahu + pahu pahu + pallet
Awa:
Ningbo/Shenzhen/Shanghai
Ka manawa o waena o ka hoʻomaka a i ka wā pau:
Nui (Nā ʻāpana) | 1 – 1000 | >1000 |
Est. Manawa(lā) | 30 | E kūkākūkā ʻia |