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Loaʻa i ka uhi CVD-SiC nā hiʻohiʻona o ke ʻano like ʻole, nā mea paʻa, ke kūpaʻa wela kiʻekiʻe, ke kūpaʻa ʻana o ka oxidation, ka maʻemaʻe kiʻekiʻe, ke kūpaʻa a me ka alkali a me ka reagent, me nā waiwai kino a me nā kemika.
Ke hoʻohālikelike ʻia me nā mea graphite maʻemaʻe kiʻekiʻe, hoʻomaka ka graphite e oxidize ma 400C, ka mea e hoʻopau ai i ka pauka ma muli o ka oxidation, ka hopena i ka pollution kaiapuni i nā ʻaoʻao peripheral a me nā keʻena māmā, a hoʻonui i nā haumia o ke kaiapuni maʻemaʻe kiʻekiʻe.
Eia nō naʻe, hiki i ka uhi ʻana o SiC ke mālama i ke kūpaʻa kino a me ke kemika ma 1600 degere, hoʻohana nui ʻia i ka ʻoihana hou, ʻoi loa i ka ʻoihana semiconductor.
Hāʻawi kā mākou hui i nā lawelawe kaʻina hana hoʻoheheʻe SiC ma ke ʻano CVD ma ka ʻili o ka graphite, ceramics a me nā mea ʻē aʻe, i hiki ai i nā kinoea kūikawā i loaʻa ke kalapona a me ke silika i ke kiʻekiʻe kiʻekiʻe e loaʻa ai nā molekala SiC maʻemaʻe kiʻekiʻe. e hana ana i ka papa pale SIC. Hoʻopili paʻa ʻia ka SIC i hoʻokumu ʻia i ka base graphite, e hāʻawi ana i ka graphite base i nā waiwai kūikawā, pēlā e hana ai i ka ʻili o ka graphite compact, Porosity-free, kiʻekiʻe wela ke kū ʻana, ka pale ʻana i ka corrosion a me ka pale oxidation.
Palapala noi
Nā hiʻohiʻona nui
1 .High maemae SiC uhi graphite
2. ʻOi aku ka maikaʻi o ka wela a me ke kūlike o ka wela
3. Ua uhi ʻia ke aniani SiC maikaʻi no ka ʻili pahee
4. Kiʻekiʻe ka lōʻihi e kū'ē i ka hoʻomaʻemaʻe kemika
Nā Manaʻo Nui o nā Coatings CVD-SIC
| SiC-CVD | ||
| ʻO ka mānoanoa | (g/cc) | 3.21 |
| Ka ikaika wiliwili | (Mpa) | 470 |
| Hoʻonui wela | (10-6/K) | 4 |
| ʻO ke kau wela wela | (W/mK) | 300 |
Hoʻopili a hoʻouna
Hiki ke hoolako:
10000 ʻāpana / ʻāpana i kēlā me kēia mahina
Puke a me ka lawe ʻana:
Hoʻopili: Kūʻai maʻamau & ikaika
ʻeke poli + pahu + pahu pahu + pallet
Awa:
Ningbo/Shenzhen/Shanghai
Ka manawa o waena o ka hoʻomaka a i ka wā pau:
| Nui (Nā ʻāpana) | 1 – 1000 | >1000 |
| Est. Manawa(lā) | 15 | E kūkākūkā ʻia |
