Silicon carbide RTA ipu lawe no ka semiconductor

ʻO ka wehewehe pōkole:

ʻO Silicon carbide kahi ʻano seramika hou me ka hana kiʻekiʻe a me nā waiwai waiwai maikaʻi loa. Ma muli o nā hiʻohiʻona e like me ka ikaika kiʻekiʻe a me ka paʻakikī, ke kūpaʻa wela kiʻekiʻe, ka conductivity thermal nui a me ke kūpaʻa corrosion kemika, ʻaneʻane hiki i ka Silicon Carbide ke kūpaʻa i nā mea kemika āpau. No laila, hoʻohana nui ʻia ʻo SiC i ka mining aila, chemical, machinery a me ka lewa, ʻoiai ʻo ka ikehu nuklea a me ka pūʻali koa i kā lākou koi kūikawā ma SIC. ʻO kekahi mau noi maʻamau hiki iā mākou ke hāʻawi aku i nā apo seal no ka pamu, valve a me nā mea pale pale etc.

Hiki iā mākou ke hoʻolālā a hana e like me kāu mau kiko kikoʻī me ka maikaʻi maikaʻi a me ka manawa hāʻawi kūpono.


Huahana Huahana

Huahana Huahana

wehewehe

Hāʻawi kā mākou hui i nā lawelawe kaʻina hana hoʻoheheʻe SiC ma ke ʻano CVD ma ka ʻili o ka graphite, ceramics a me nā mea ʻē aʻe, i hiki ai i nā kinoea kūikawā i loaʻa ke kalapona a me ke silika i ke kiʻekiʻe kiʻekiʻe e loaʻa ai nā molekala SiC maʻemaʻe kiʻekiʻe. e hana ana i ka papa pale SIC.

Nā hiʻohiʻona nui

1. Kiʻekiʻe wela oxidation kū'ē:
ʻoi aku ka maikaʻi o ka pale ʻana i ka oxidation ke kiʻekiʻe ka mahana e like me 1600 C.
2. Maʻemaʻe kiʻekiʻe: hana ʻia e ka hoʻoheheʻe ʻana i ka mahu ma lalo o ke kūlana chlorination kiʻekiʻe.
3. Erosion kū'ē: kiʻekiʻe paakiki, paʻaʻiliʻili, maikaʻi particles.
4. Ke kū'ē i ka corrosion: acid, alkali, paʻakai a me nā mea hoʻoulu.

Nā kiko'ī nui o ka CVD-SIC Coating

Nā Waiwai SiC-CVD

Hoʻokumu Crystal Māhele FCC β
ʻO ka mānoanoa g/cm ³ 3.21
ʻoʻoleʻa ʻO ka paʻakikī o Vickers 2500
Ka nui o ka palaoa μm 2~10
Maemae Kemika % 99.99995
Kaha Wela J·kg-1 ·K-1 640
Mahana Sublimation 2700
Ikaika Felexural MPa (RT 4-point) 415
ʻO Young's Modulus Gpa (4pt piko, 1300 ℃) 430
Hoʻonui wela (CTE) 10-6K-1 4.5
ʻO ke kau wela wela (W/mK) 300
Kahi hana Semicera
Kahi hana Semicera 2
mīkini lako
ʻO ka hana CNN, hoʻomaʻemaʻe kemika, ka uhi CVD
ʻO kā mākou lawelawe

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