ʻO nā pāpaʻi Silicon Carbide|SiC Wafers

ʻO ka wehewehe pōkole:

ʻO Semicera Energy Technology Co., Ltd. kahi mea hoʻolako alakaʻi kūikawā i ka wafer a me nā mea hoʻohana semiconductor holomua. Hoʻolaʻa mākou i ka hāʻawi ʻana i nā huahana kiʻekiʻe, hilinaʻi, a me nā mea hou i ka hana semiconductor, ʻoihana photovoltaic a me nā ʻoihana ʻē aʻe e pili ana.

Loaʻa i kā mākou laina huahana nā huahana graphite i uhi ʻia ʻo SiC/TaC a me nā huahana seramika, e hoʻopuni ana i nā mea like ʻole e like me ka silicon carbide, silicon nitride, a me ka alumini oxide a me nā mea ʻē aʻe.

I kēia manawa, ʻo mākou wale nō ka mea hana e hāʻawi i ka maʻemaʻe 99.9999% SiC coating a me 99.9% recrystallized silicon carbide. ʻO ka lōʻihi o ka uhi ʻana o SiC hiki iā mākou ke hana 2640mm.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

ʻO Silicon carbide (SiC) hoʻokahi kristal mea i loaʻa i kahi ākea ākea nui (~ Si 3 mau manawa), kiʻekiʻe thermal conductivity (~ Si 3.3 mau manawa a i ʻole GaAs 10 manawa), kiʻekiʻe electron saturation migration rate (~ Si 2.5 mau manawa), kiʻekiʻe breakdown uila. kahua (~ Si 10 manawa a i ʻole GaAs 5 manawa) a me nā hiʻohiʻona ʻē aʻe.

Loaʻa i nā mea SiC nā pono kūpono ʻole i ke kahua o ka wela kiʻekiʻe, ke kaomi kiʻekiʻe, ke alapine kiʻekiʻe, nā ʻenehana uila mana kiʻekiʻe a me nā noi kaiapuni nui e like me ka aerospace, pūʻali koa, ka ikehu nuklea, etc. nā noi, a ke lilo nei i mea nui o nā semiconductors mana.

4H-SiC Silicon carbide substrate kikoʻī

Mea项目	Nā kikoʻī参数
Polytype 晶型	4H -SiC	6H- SiC
Anawaena 晶圆直径	2 iniha \| 3 iniha \| 4 iniha \| 6 iniha	2 iniha \| 3 iniha \| 4 iniha \| 6 iniha
mānoanoa 厚度	330 μm ~ 350 μm	330 μm ~ 350 μm
ʻO ka hoʻokō 导电类型	N – ʻano / Semi-insulating N型导电片/ 半绝缘片	N – ʻano / Semi-insulating N型导电片/ 半绝缘片
Dopant 掺杂剂	N2 ( Nitrogen )V ( Vanadium )	N2 ( Nitrogen ) V ( Vanadium )
Kūlana 晶向	Ma ke axis <0001> Paʻa axis <0001> aku 4°	Ma ke axis <0001> Paʻa axis <0001> aku 4°
Kū'ē 电阻率	0.015 ~ 0.03 ohm-cm (4H-N)	0.02 ~ 0.1 ohm-cm (6H-N)
ʻOiʻa Micropipe (MPD) 微管密度	≤10/cm2 ~ ≤1/cm2	≤10/cm2 ~ ≤1/cm2
TTV 总厚度变化	≤ 15 μm	≤ 15 μm
Kakaka / Warp 翘曲度	≤25 μm	≤25 μm
Ili 表面处理	DSP/SSP	DSP/SSP
Papa 产品等级	Papa hana / noiʻi	Papa hana / noiʻi
Ke Kaʻina Hoʻopaʻa Crystal 堆积方式	ABCB	ABCABC
Lattice parameter 晶格参数	a=3.076A , c=10.053A	a=3.073A , c=15.117A
Eg/eV(Band-gap) 禁带宽度	3.27 eV	3.02 eV
ε(Dielectric mau) 介电常数	9.6	9.66
Papa kuhikuhi 折射率	n0 =2.719 ne =2.777	n0 =2.707 , ne =2.755

6H-SiC Silicon Carbide substrate kikoʻī

Mea项目	Nā kikoʻī参数
Polytype 晶型	6H-SiC
Anawaena 晶圆直径	4 iniha \| 6 iniha
mānoanoa 厚度	350μm ~ 450μm
ʻO ka hoʻokō 导电类型	N – ʻano / Semi-insulating N型导电片/ 半绝缘片
Dopant 掺杂剂	N2(Nitrogen) V (Vanadium)
Kūlana 晶向	<0001> mai 4°± 0.5°
Kū'ē 电阻率	0.02 ~ 0.1 ohm-cm (6H-N ʻano)
ʻOiʻa Micropipe (MPD) 微管密度	≤ 10/cm2
TTV 总厚度变化	≤ 15 μm
Kakaka / Warp 翘曲度	≤25 μm
Ili 表面处理	ʻO ka Maka: CMP, Epi-Makaukau C Maka: Optical Polish
Papa 产品等级	Papa noiʻi