GaAs Wafers|GaAs Epi Wafers|ʻO Galllium Arsenide Substrates

GaAs Wafers|GaAs Epi Wafers|Nā Kiʻi Hōʻike ʻia ʻo Galllium Arsenide Substrates

ʻO ka wehewehe pōkole:

ʻO WeiTai Energy Technology Co., Ltd. kahi mea hoʻolako alakaʻi kūikawā i ka wafer a me nā mea hoʻohana semiconductor holomua.Hoʻolaʻa mākou i ka hāʻawi ʻana i nā huahana kiʻekiʻe, hilinaʻi, a me nā mea hou i ka hana semiconductor, ʻoihana photovoltaic a me nā ʻoihana ʻē aʻe e pili ana.

Loaʻa i kā mākou laina huahana nā huahana graphite i uhi ʻia ʻo SiC/TaC a me nā huahana seramika, e hoʻopuni ana i nā mea like ʻole e like me ka silicon carbide, silicon nitride, a me ka alumini oxide a me nā mea ʻē aʻe.

I kēia manawa, ʻo mākou wale nō ka mea hana e hāʻawi i ka maʻemaʻe 99.9999% SiC coating a me 99.9% recrystallized silicon carbide.ʻO ka lōʻihi o ka uhi ʻana o SiC hiki iā mākou ke hana 2640mm.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

Hoʻokaʻawale ʻia nā substrates GaAs i conductive a me semi-insulating, i hoʻohana nui ʻia i ka laser (LD), semiconductor light-emitting diode (LED), kokoke-infrared laser, quantum well high-power laser a me nā panela solar kiʻekiʻe.HEMT a me HBT chips no ka radar, microwave, ka nalu millimeter a i ʻole nā kamepiula kiʻekiʻe kiʻekiʻe a me nā kamaʻilio ʻike;ʻO nā mea lekiō no ke kamaʻilio uea, 4G, 5G, kamaʻilio ukali, WLAN.

I kēia mau lā, ua holomua nui nā substrates gallium arsenide i ka mini-LED, Micro-LED, a me ka ʻulaʻula LED, a ua hoʻohana nui ʻia i nā mea hiki ke hoʻohana ʻia ma AR/VR.

Anawaena 晶片直径	50mm \|75mm \|100mm \|150mm
ʻAno ulu 生长方式	LEC液封直拉法 VGF垂直梯度凝固法
Mānoanoa Wafer 厚度	350 um ~ 625 um
Kūlana 晶向	<100> / <111> / <110> a i ʻole
ʻAno Conductive 导电类型	P - ʻano / N - ʻano / Semi-insulating
ʻAno/Dopant 掺杂剂	Zn / Si / wehe ʻole ʻia
Kaʻa lawe 载流子浓度	1E17 ~ 5E19 knm-3
Kū'ē ma RT 室温电阻率(ohm•cm)	≥1E7 no SI
Ka neʻe ʻana 迁移率(cm2/V•Sec)	≥4000
EPD(Etch Pit Density) 腐蚀坑密度	100~1E5
TTV 总厚度变化	≤ 10 um
Kakaka / Warp 翘曲度	≤ 20 um
Hoʻopau ʻili 表面	DSP/SSP
Hōʻailona Laser 激光码
Papa 等级	Epi poli pohihihi / mechanical grade