Semicerahauʻoli e hāʻawi2" Gallium Oxide Substrates, he mea ʻokiʻoki i hoʻolālā ʻia e hoʻonui i ka hana o nā mea semiconductor holomua. ʻO kēia mau pani, i hana ʻia mai ka Gallium Oxide (Ga2O3), e hōʻike ana i kahi bandgap ultra-ākea, e hoʻolilo iā lākou i koho kūpono no ka mana kiʻekiʻe, kiʻekiʻe-frequency, a me nā noi optoelectronic UV.
Nā mea nui:
• ʻO ka Bandgap Ultra-Wide: Ka2" Gallium Oxide SubstratesHāʻawi i kahi bandgap koʻikoʻi ma kahi o 4.8 eV, hiki ke kiʻekiʻe o ka volta a me ka hana wela, ʻoi aku ma mua o ka hiki o nā mea semiconductor kuʻuna e like me ke silika.
•Ka Volta Haʻi Kuʻuna: Hāʻawi kēia mau substrates i nā mea hana e hoʻopaʻa i nā volta kiʻekiʻe loa, e hoʻomaʻamaʻa iā lākou no nā uila uila, ʻoi aku hoʻi i nā noi kiʻekiʻe-voltage.
•ʻOi aku ka maikaʻi o ka wela wela: Me ke kūpaʻa wela maikaʻi, mālama kēia mau substrate i ka hana maʻamau a hiki i nā wahi wela wela, kūpono no nā noi kiʻekiʻe a me ka wela kiʻekiʻe.
•Mea Kiʻekiʻe Kiʻekiʻe: Ka2" Gallium Oxide Substrateshāʻawi i nā haʻahaʻa haʻahaʻa haʻahaʻa a me ka maikaʻi crystalline kiʻekiʻe, e hōʻoiaʻiʻo ana i ka hana pono a me ka maikaʻi o kāu mau mea semiconductor.
•Nā mea hoʻohana like ʻole: Ua kūpono kēia mau substrate no ka nui o nā noi, me nā transistors mana, Schottky diodes, a me nā polokalamu LED UV-C, e hāʻawi ana i kahi kahua paʻa no nā mana a me nā hana hou optoelectronic.
Wehe i ka mana piha o kāu mau mea semiconductor me Semicera2" Gallium Oxide Substrates. Hoʻolālā ʻia kā mākou substrate e hoʻokō i nā koi koi o nā noi holomua o kēia lā, e hōʻoiaʻiʻo ana i ka hana kiʻekiʻe, hilinaʻi, a me ka pono. E koho iā Semicera no nā mea semiconductor hou loa e hoʻokau i ka hana hou.
| Nā mea | Paahana | Ka noiʻi | Dummy |
| Nā Kūlana Crystal | |||
| Polytype | 4H | ||
| Ua hewa ka hoʻonohonoho ʻana o ka ʻili | <11-20 >4±0.15° | ||
| Nā Kūlana Uila | |||
| Dopant | n-ʻano Nitrogen | ||
| Kū'ē | 0.015-0.025ohm·cm | ||
| Nā Kūlana Mechanical | |||
| Anawaena | 150.0±0.2mm | ||
| mānoanoa | 350±25 μm | ||
| Kūlana pālahalaha mua | [1-100]±5° | ||
| Ka lōʻihi pālahalaha mua | 47.5±1.5mm | ||
| palahalaha lua | ʻAʻohe | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Kakaka | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| 'Oka (AFM) mua (Si-maka) | Ra≤0.2nm (5μm*5μm) | ||
| Hoʻolālā | |||
| Micropipe mānoanoa | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metala haumia | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| ʻAno o mua | |||
| Imua | Si | ||
| Hoʻopau ʻili | Si-maka CMP | ||
| Nā ʻāpana | ≤60ea/wafer (nui≥0.3μm) | NA | |
| Nā ʻōpala | ≤5ea/mm. Ka lōʻihi huila ≤Diameter | ʻO ka lōʻihi huila≤2*Diameter | NA |
| ʻAlani ʻili/mau lua/ʻeleʻele/striations/ māwae/contamination | ʻAʻohe | NA | |
| Nā ʻāpana lihi/indents/fracture/papa hex | ʻAʻohe | ||
| Nā wahi polytype | ʻAʻohe | ʻĀpana huila≤20% | ʻĀpana huila≤30% |
| Hōʻailona laser mua | ʻAʻohe | ||
| ʻAno o hope | |||
| Hoʻopau hope | C-maka CMP | ||
| Nā ʻōpala | ≤5ea / mm, Ka lōʻihi huila≤2 * Anawaena | NA | |
| Nā pōʻino hope (nā ʻāpana lihi/indents) | ʻAʻohe | ||
| ʻōkalakala kua | Ra≤0.2nm (5μm*5μm) | ||
| Hōʻailona laser hope | 1 mm (mai ka lihi luna) | ||
| Kaulana | |||
| Kaulana | Chamfer | ||
| Hoʻopili ʻia | |||
| Hoʻopili ʻia | Epi-mākaukau me ka hoʻopaʻa ʻumeke Puke cassette nui-wafer | ||
| *Nā memo: "NA" ʻo ia hoʻi, ʻaʻohe noi ʻO nā mea i ʻōlelo ʻole ʻia e pili ana i SEMI-STD. | |||
