ʻO Gallium Nitride Substrates|GaN Wafers

Gallium Nitride Substrates|GaN Wafers Kiʻi Hōʻike ʻia

ʻO ka wehewehe pōkole:

ʻO Gallium nitride (GaN), e like me nā mea silicon carbide (SiC), no ke kolu o ka hanauna o nā mea semiconductor me ka laulā ākea ākea, me ka laulā ākea ākea, kiʻekiʻe thermal conductivity, kiʻekiʻe electron saturation migration rate, a me ke kiʻekiʻe haʻihaʻi kiʻekiʻe kiʻekiʻe. hiʻona.Loaʻa i nā polokalamu GaN kahi ākea o nā manaʻo noi ma ke alapine kiʻekiʻe, ka wikiwiki kiʻekiʻe a me nā kahua koi mana kiʻekiʻe e like me ke kukui mālama ʻana i ka ikehu LED, hōʻike projection laser, nā kaʻa ikehu hou, smart grid, kamaʻilio 5G.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

ʻO ke kolu o ka hanauna semiconductor waiwai ka nui o ka SiC, GaN, daimana, a me nā mea ʻē aʻe, no ka mea, ʻoi aku ka nui o kona ākea ākea (Eg) ma mua o a i ʻole like me 2.3 electron volts (eV), ʻike ʻia hoʻi he mau mea semiconductor ākea band gap.Hoʻohālikelike ʻia me nā mea semiconductor mua a me ka lua, ʻo ke kolu o ka hanauna semiconductor nā mea maikaʻi o ke kiʻekiʻe thermal conductivity, kiʻekiʻe breakdown uila kahua, kiʻekiʻe saturated electron migration rate a me ka ikehu hoʻopaʻa kiʻekiʻe, hiki ke hoʻokō i nā koi hou o ka ʻenehana uila hou no ke kiʻekiʻe. ka mahana, ka mana kiʻekiʻe, ke kaomi kiʻekiʻe, ke alapine kiʻekiʻe a me ka pale ʻana i ka radiation a me nā kūlana koʻikoʻi ʻē aʻe.Loaʻa iā ia nā manaʻo noiʻi koʻikoʻi ma nā kahua o ka pale aupuni, mokulele, aerospace, ʻimi aila, mālama optical, etc., a hiki ke hōʻemi i ka nalowale o ka ikehu ma mua o 50% i nā ʻoihana hoʻolālā he nui e like me ke kamaʻilio broadband, ikehu lā, hana kaʻa, ʻO nā kukui semiconductor, a me ka mākaʻikaʻi akamai, a hiki ke hōʻemi i ka nui o nā mea hana ma mua o 75%, he mea nui ia no ka hoʻomohala ʻana i ka ʻepekema kanaka a me ka ʻenehana.

'ikamu 项目	GaN-FS-CU-C50	GaN-FS-CN-C50	GaN-FS-C-SI-C50
Anawaena 晶圆直径	50.8 ± 1 mm
mānoanoa厚度	350 ± 25 μm
Kūlana 晶向	C plane (0001) off angle toward M-axis 0.35 ± 0.15°
Pāpā Kūikawā 主定位边	(1-100) 0 ± 0.5°, 16 ± 1 mm
Pāpā lua 次定位边	(11-20) 0 ± 3°, 8 ± 1 mm
ʻO ka hoʻokō 导电性	N-ʻano	N-ʻano	Semi-Insulating
Kū'ē (300K) 电阻率	< 0.1 Ω·cm	< 0.05 Ω·cm	> 106 Ω·cm
TTV 平整度	≤ 15 μm
PAHU 弯曲度	≤ 20 μm
ʻO ka ʻili o ke alo Ga面粗糙度	< 0.2 nm (hoʻomaʻamaʻa ʻia);
	a i ʻole <0.3 nm (ka hoʻomaʻemaʻe ʻia a me ka mālama ʻana i ka ʻili no ka epitaxy)
N Ka ʻili o ke alo N面粗糙度	0.5 ~ 1.5 μm
	koho: 1 ~ 3 nm (kahi lepo maikaʻi);< 0.2 nm (māmā)
Paʻaʻawaʻawa 位错密度	Mai 1 x 105 a 3 x 106 cm-2 (helu ʻia e CL)*
ʻAno ʻino ʻino 缺陷密度	< 2 knm-2
Wahi hiki ke hoohana 有效面积	> 90% (ka hoʻokaʻawale ʻana i nā hemahema o ka ʻaoʻao a me ka macro)
Hiki ke hoʻopilikino ʻia e like me nā koi o ka mea kūʻai aku, nā ʻano like ʻole o ka silicon, sapphire, SiC based GaN epitaxial sheet.