Semicerahoʻolauna haʻaheo i kāna4" Gallium Oxide Substrates, he mea hoʻoheheʻe honua i hana ʻia no ka hoʻokō ʻana i nā koi ulu o nā mea hana semiconductor kiʻekiʻe. Galium Oxide (Ga2O3) hāʻawi nā substrates i kahi bandgap ultra-ākea, e hoʻolilo iā lākou i mea kūpono no ka uila mana o ka hanauna e hiki mai ana, UV optoelectronics, a me nā mea uila kiʻekiʻe.
Nā mea nui:
• ʻO ka Bandgap Ultra-Wide: Ka4" Gallium Oxide Substrateskaena i kahi bandgap ma kahi o 4.8 eV, e ʻae ana i ka volta a me ka hoʻomanawanui wela, ʻoi aku ka maikaʻi o nā mea semiconductor kuʻuna e like me ke silika.
•Kiʻekiʻe Haʻahaʻa Voltage: ʻO kēia mau substrates e hiki ai i nā mea hana ke hana i nā voltage kiʻekiʻe a me nā mana, e hoʻomaʻamaʻa iā lākou no nā noi kiʻekiʻe-voltage i ka uila uila.
•ʻOi aku ka paʻa wela wela: Hāʻawi ka Gallium Oxide substrates i ka conductivity thermal maikaʻi loa, e hōʻoia ana i ka hana paʻa ma lalo o nā kūlana koʻikoʻi, kūpono no ka hoʻohana ʻana i nā kaiapuni koi.
•Maikaʻi Mea Kiʻekiʻe: Me nā haʻahaʻa haʻahaʻa haʻahaʻa a me ka maikaʻi kristal kiʻekiʻe, ʻo kēia mau substrates e hōʻoia i ka hana hilinaʻi a paʻa, hoʻonui i ka pono a me ka lōʻihi o kāu mau polokalamu.
•Hoʻohana ʻokoʻa: He kūpono no ka nui o nā noi, e like me nā transistors mana, Schottky diodes, a me nā mea uila UV-C LED, e hiki ai i nā mea hou i ka mana a me nā kahua optoelectronic.
E ʻimi i ka wā e hiki mai ana o ka ʻenehana semiconductor me Semicera's4" Gallium Oxide Substrates. Hoʻolālā ʻia kā mākou substrates e kākoʻo i nā noi ʻoi loa, e hāʻawi ana i ka hilinaʻi a me ka pono e pono ai no nā mea ʻokiʻoki o kēia lā. E hilinaʻi iā Semicera no ka maikaʻi a me ka hana hou i kāu mau mea semiconductor.
| Nā mea | Paahana | Ka noiʻi | Dummy |
| Nā Kūlana Crystal | |||
| Polytype | 4H | ||
| Ua hewa ka hoʻonohonoho ʻana o ka ʻili | <11-20 >4±0.15° | ||
| Nā Kūlana Uila | |||
| Dopant | n-ʻano Nitrogen | ||
| Kū'ē | 0.015-0.025ohm·cm | ||
| Nā Kūlana Mechanical | |||
| Anawaena | 150.0±0.2mm | ||
| mānoanoa | 350±25 μm | ||
| Kūlana pālahalaha mua | [1-100]±5° | ||
| Ka lōʻihi pālahalaha mua | 47.5±1.5mm | ||
| palahalaha lua | ʻAʻohe | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Kakaka | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| 'Oka (AFM) mua (Si-maka) | Ra≤0.2nm (5μm*5μm) | ||
| Hoʻolālā | |||
| Micropipe mānoanoa | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metala haumia | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| ʻAno o mua | |||
| Imua | Si | ||
| Hoʻopau ʻili | Si-maka CMP | ||
| Nā ʻāpana | ≤60ea/wafer (nui≥0.3μm) | NA | |
| Nā ʻōpala | ≤5ea/mm. Ka lōʻihi huila ≤Diameter | ʻO ka lōʻihi huila≤2*Diameter | NA |
| ʻAlani ʻili/mau lua/ʻeleʻele/striations/ māwae/contamination | ʻAʻohe | NA | |
| Nā ʻāpana lihi/indents/fracture/papa hex | ʻAʻohe | ||
| Nā wahi polytype | ʻAʻohe | ʻĀpana huila≤20% | ʻĀpana huila≤30% |
| Hōʻailona laser mua | ʻAʻohe | ||
| ʻAno o hope | |||
| Hoʻopau hope | C-maka CMP | ||
| Nā ʻōpala | ≤5ea / mm, Ka lōʻihi huila≤2 * Anawaena | NA | |
| Nā hemahema o hope (nā ʻāpana lihi/indents) | ʻAʻohe | ||
| ʻōkalakala kua | Ra≤0.2nm (5μm*5μm) | ||
| Hōʻailona laser hope | 1 mm (mai ka lihi luna) | ||
| Kaulana | |||
| Kaulana | Chamfer | ||
| Hoʻopili ʻia | |||
| Hoʻopili ʻia | Epi-mākaukau me ka hoʻopaʻa ʻumeke Puke cassette nui-wafer | ||
| *Nā memo: "NA" ʻo ia hoʻi, ʻaʻohe noi ʻO nā mea i ʻōlelo ʻole ʻia e pili ana i SEMI-STD. | |||
