4″ Gallium Oxide Substrates

ʻO ka wehewehe pōkole:

4″ Gallium Oxide Substrates- Wehe i nā pae hou o ka maikaʻi a me ka hana ʻana i ka uila uila a me nā polokalamu UV me ka Semicera kiʻekiʻe 4″ Gallium Oxide Substrates, i hoʻolālā ʻia no nā noi semiconductor ʻokiʻoki.


Huahana Huahana

Huahana Huahana

Semicerahoʻolauna haʻaheo i kāna4" Gallium Oxide Substrates, he mea hoʻoheheʻe honua i hana ʻia e hoʻokō i nā koi ulu o nā mea semiconductor hana kiʻekiʻe. Galium Oxide (Ga2O3) hāʻawi nā substrates i kahi bandgap ultra-ākea, e hoʻolilo iā lākou i mea kūpono no ka uila mana o ka hanauna e hiki mai ana, UV optoelectronics, a me nā mea uila kiʻekiʻe.

 

Nā mea nui:

• ʻO ka Bandgap Ultra-Wide: Ka4" Gallium Oxide Substrateskaena i kahi bandgap ma kahi o 4.8 eV, e ʻae ana i ka volta a me ka hoʻomanawanui wela, ʻoi aku ka maikaʻi o nā mea semiconductor kuʻuna e like me ke silika.

Kiʻekiʻe Haʻahaʻa Voltage: ʻO kēia mau substrates e hiki ai i nā mea hana ke hana i nā volta kiʻekiʻe a me nā mana, e hoʻomaʻamaʻa iā lākou no nā noi kiʻekiʻe-voltage i ka uila uila.

ʻOi aku ka paʻa wela wela: Hāʻawi ka Gallium Oxide substrates i ka conductivity thermal maikaʻi loa, e hōʻoia ana i ka hana paʻa ma lalo o nā kūlana koʻikoʻi, kūpono no ka hoʻohana ʻana i nā kaiapuni koi.

Maikaʻi Mea Kiʻekiʻe: Me nā haʻahaʻa haʻahaʻa haʻahaʻa a me ka maikaʻi kristal kiʻekiʻe, ʻo kēia mau substrates e hōʻoia i ka hana hilinaʻi a paʻa, hoʻonui i ka pono a me ka lōʻihi o kāu mau polokalamu.

Hoʻohana ʻokoʻa: He kūpono no ka nui o nā noi, e like me nā transistors mana, Schottky diodes, a me nā mea uila UV-C LED, e hiki ai i nā mea hou i ka mana a me nā kahua optoelectronic.

 

E ʻimi i ka wā e hiki mai ana o ka ʻenehana semiconductor me Semicera's4" Gallium Oxide Substrates. Hoʻolālā ʻia kā mākou substrates e kākoʻo i nā noi ʻoi loa, e hāʻawi ana i ka hilinaʻi a me ka pono e pono ai no nā mea ʻokiʻoki o kēia lā. E hilinaʻi iā Semicera no ka maikaʻi a me ka hana hou i kāu mau mea semiconductor.

Nā mea

Paahana

Ka noiʻi

Dummy

Nā Kūlana Crystal

Polytype

4H

Ua hewa ka hoʻonohonoho ʻana o ka ʻili

<11-20 >4±0.15°

Nā Kūlana Uila

Dopant

n-ʻano Nitrogen

Kū'ē

0.015-0.025ohm·cm

Nā Kūlana Mechanical

Anawaena

150.0±0.2mm

mānoanoa

350±25 μm

Kūlana pālahalaha mua

[1-100]±5°

Ka lōʻihi pālahalaha mua

47.5±1.5mm

palahalaha lua

ʻAʻohe

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Kakaka

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

'Oka (AFM) mua (Si-maka)

Ra≤0.2nm (5μm*5μm)

Hoʻolālā

Micropipe mānoanoa

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Metala haumia

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

ʻAno o mua

Imua

Si

Hoʻopau ʻili

Si-maka CMP

Nā ʻāpana

≤60ea/wafer (nui≥0.3μm)

NA

Nā ʻōpala

≤5ea/mm. Ka lōʻihi huila ≤Diameter

ʻO ka lōʻihi huila≤2*Diameter

NA

ʻAlani ʻili/mau lua/ʻeleʻele/striations/ māwae/contamination

ʻAʻohe

NA

Nā ʻāpana lihi/indents/fracture/papa hex

ʻAʻohe

Nā wahi polytype

ʻAʻohe

ʻĀpana huila≤20%

ʻĀpana huila≤30%

Hōʻailona laser mua

ʻAʻohe

ʻAno o hope

Hoʻopau hope

C-maka CMP

Nā ʻōpala

≤5ea / mm, Ka lōʻihi huila≤2 * Anawaena

NA

Nā pōʻino hope (nā ʻāpana lihi/indents)

ʻAʻohe

ʻōkalakala kua

Ra≤0.2nm (5μm*5μm)

Hōʻailona laser hope

1 mm (mai ka lihi luna)

Kaulana

Kaulana

Chamfer

Hoʻopili ʻia

Hoʻopili ʻia

Epi-mākaukau me ka hoʻopaʻa ʻumeke

Puke cassette nui-wafer

*Nā memo: "NA" ʻo ia hoʻi, ʻaʻohe noi ʻO nā mea i ʻōlelo ʻole ʻia e pili ana i SEMI-STD.

tech_1_2_size
SiC wafers

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