Semicerahāʻawi haʻaheoGa2O3Epitaxy, kahi hoʻoponopono hou i hoʻolālā ʻia e pana i nā palena o ka uila uila a me ka optoelectronics. Hoʻohana kēia ʻenehana epitaxial holomua i nā waiwai kūʻokoʻa o Gallium Oxide (Ga2O3) e hāʻawi i ka hana kiʻekiʻe ma nā noi koi.
Nā mea nui:
• Kūikawā Laulā Bandgap: Ga2O3Epitaxye hōʻike ana i kahi bandgap ultra-ākea, e ʻae ana i nā voltages haʻihaʻi kiʻekiʻe a me ka hana maikaʻi ma nā wahi mana kiʻekiʻe.
•Kiʻekiʻe Thermal Conductivity: Hāʻawi ka papa epitaxial i ka conductivity thermal maikaʻi loa, e hōʻoiaʻiʻo ana i ka hana paʻa ʻoiai ma lalo o nā kūlana wela kiʻekiʻe, e kūpono ia no nā hāmeʻa kiʻekiʻe.
•ʻOi aku ka maikaʻi o ka waiwai: Loaʻa i ka maikaʻi aniani kiʻekiʻe me nā hemahema liʻiliʻi, e hōʻoiaʻiʻo ana i ka hana maikaʻi o ka hāmeʻa a me ka lōʻihi o ke ola, ʻoi aku hoʻi i nā noi koʻikoʻi e like me nā transistors mana a me nā mea ʻike UV.
•Versatility i nā noi: He kūpono kūpono no nā uila uila, nā noi RF, a me nā optoelectronics, e hāʻawi ana i kahi kumu hilinaʻi no nā mea hana semiconductor e hiki mai ana.
E ʻike i ka hiki oGa2O3Epitaxyme nā hoʻonā hou a Semicera. Hoʻolālā ʻia kā mākou huahana epitaxial e hoʻokō i nā kūlana kiʻekiʻe o ka maikaʻi a me ka hana, e hiki ai i kāu mau mea hana ke hana me ka maikaʻi loa a me ka hilinaʻi. E koho iā Semicera no ka ʻenehana semiconductor ʻokiʻoki.
| Nā mea | Paahana | Ka noiʻi | Dummy |
| Nā Kūlana Crystal | |||
| Polytype | 4H | ||
| Ua hewa ka hoʻonohonoho ʻana o ka ʻili | <11-20 >4±0.15° | ||
| Nā Kūlana Uila | |||
| Dopant | n-ʻano Nitrogen | ||
| Kū'ē | 0.015-0.025ohm·cm | ||
| Nā Kūlana Mechanical | |||
| Anawaena | 150.0±0.2mm | ||
| mānoanoa | 350±25 μm | ||
| Kūlana pālahalaha mua | [1-100]±5° | ||
| Ka lōʻihi pālahalaha mua | 47.5±1.5mm | ||
| palahalaha lua | ʻAʻohe | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Kakaka | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| 'Oka (AFM) mua (Si-maka) | Ra≤0.2nm (5μm*5μm) | ||
| Hoʻolālā | |||
| Micropipe mānoanoa | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metala haumia | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| ʻAno o mua | |||
| Imua | Si | ||
| Hoʻopau ʻili | Si-maka CMP | ||
| Nā ʻāpana | ≤60ea/wafer (nui≥0.3μm) | NA | |
| Nā ʻōpala | ≤5ea/mm. Ka lōʻihi huila ≤Diameter | ʻO ka lōʻihi huila≤2*Diameter | NA |
| ʻAlani ʻili/mau lua/ʻeleʻele/striations/ māwae/contamination | ʻAʻohe | NA | |
| Nā ʻāpana lihi/indents/fracture/papa hex | ʻAʻohe | ||
| Nā wahi polytype | ʻAʻohe | ʻĀpana huila≤20% | ʻĀpana huila≤30% |
| Hōʻailona laser mua | ʻAʻohe | ||
| ʻAno o hope | |||
| Hoʻopau hope | C-maka CMP | ||
| Nā ʻōpala | ≤5ea / mm, Ka lōʻihi huila≤2 * Anawaena | NA | |
| Nā pōʻino hope (nā ʻāpana lihi/indents) | ʻAʻohe | ||
| ʻōkalakala kua | Ra≤0.2nm (5μm*5μm) | ||
| Hōʻailona laser hope | 1 mm (mai ka lihi luna) | ||
| Kaulana | |||
| Kaulana | Chamfer | ||
| Hoʻopili ʻia | |||
| Hoʻopili ʻia | Epi-mākaukau me ka hoʻopaʻa ʻumeke Puke cassette nui-wafer | ||
| *Nā memo: "NA" ʻo ia hoʻi, ʻaʻohe noi ʻO nā mea i ʻōlelo ʻole ʻia e pili ana i SEMI-STD. | |||
