Haʻaheo ʻo Semicera e hōʻike i kaGa2O3Pāpaʻa, he mea ʻokiʻoki i mākaukau e hoʻololi i ka uila uila a me ka optoelectronics.Galium Oxide (Ga2O3) nā mea paniʻike ʻia no kā lākou bandgap ultra-ākea, e hoʻolilo iā lākou i mea kūpono no nā mea mana kiʻekiʻe a me nā alapine kiʻekiʻe.
Nā mea nui:
• Ka Puʻupuʻu Puʻupuʻu Nui: Ga2Hāʻawi ʻo O3 i kahi bandgap ma kahi o 4.8 eV, e hoʻonui nui ana i kona hiki ke mālama i nā volta kiʻekiʻe a me nā mahana i hoʻohālikelike ʻia i nā mea kahiko e like me Silicon a me GaN.
• High Breakdown Voltage: Me kahi kahua hoʻohaʻahaʻa kūikawā, kaGa2O3PāpaʻaHe kūpono ia no nā polokalamu e koi ana i ka hana kiʻekiʻe-voltage, e hōʻoia ana i ka ʻoi aku ka maikaʻi a me ka hilinaʻi.
• Paʻa Thermal: ʻO ka ʻoi aku ka maikaʻi o ka wela wela o ka mea i kūpono ia no nā noi ma nā kaiapuni koʻikoʻi, e mālama ana i ka hana ma lalo o nā kūlana paʻakikī.
• Nā mea hoʻohana nui: He kūpono no ka hoʻohana ʻana i nā transistors mana kiʻekiʻe, nā mea uila optoelectronic UV, a me nā mea hou aku, e hāʻawi ana i kahi kahua paʻa no nā ʻōnaehana uila holomua.
E ʻike i ka wā e hiki mai ana o ka ʻenehana semiconductor me Semicera'sGa2O3Pāpaʻa. Hoʻolālā ʻia e hoʻokō i nā koi e ulu nei o nā uila uila kiʻekiʻe a me nā alapine kiʻekiʻe, hoʻonohonoho kēia substrate i kahi kūlana hou no ka hana a me ka lōʻihi. E hilinaʻi iā Semicera e hāʻawi i nā hoʻonā hou no kāu mau noi paʻakikī loa.
| Nā mea | Paahana | Ka noiʻi | Dummy |
| Nā Kūlana Crystal | |||
| Polytype | 4H | ||
| Ua hewa ka hoʻonohonoho ʻana o ka ʻili | <11-20 >4±0.15° | ||
| Nā Kūlana Uila | |||
| Dopant | n-ʻano Nitrogen | ||
| Kū'ē | 0.015-0.025ohm·cm | ||
| Nā Kūlana Mechanical | |||
| Anawaena | 150.0±0.2mm | ||
| mānoanoa | 350±25 μm | ||
| Kūlana pālahalaha mua | [1-100]±5° | ||
| Ka lōʻihi pālahalaha mua | 47.5±1.5mm | ||
| palahalaha lua | ʻAʻohe | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Kakaka | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| 'Oka (AFM) mua (Si-maka) | Ra≤0.2nm (5μm*5μm) | ||
| Hoʻolālā | |||
| Micropipe mānoanoa | <1 ea/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metala haumia | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| ʻAno o mua | |||
| Imua | Si | ||
| Hoʻopau ʻili | Si-maka CMP | ||
| Nā ʻāpana | ≤60ea/wafer (nui≥0.3μm) | NA | |
| Nā ʻōpala | ≤5ea/mm. Ka lōʻihi huila ≤Diameter | ʻO ka lōʻihi huila≤2*Diameter | NA |
| ʻAlani ʻili/mau lua/ʻeleʻele/striations/ māwae/contamination | ʻAʻohe | NA | |
| Nā ʻāpana lihi/indents/fracture/papa hex | ʻAʻohe | ||
| Nā wahi polytype | ʻAʻohe | ʻĀpana huila≤20% | ʻĀpana huila≤30% |
| Hōʻailona laser mua | ʻAʻohe | ||
| ʻAno o hope | |||
| Hoʻopau hope | C-maka CMP | ||
| Nā ʻōpala | ≤5ea / mm, Ka lōʻihi huila≤2 * Anawaena | NA | |
| Nā pōʻino hope (nā ʻāpana lihi/indents) | ʻAʻohe | ||
| ʻōkalakala kua | Ra≤0.2nm (5μm*5μm) | ||
| Hōʻailona laser hope | 1 mm (mai ka lihi luna) | ||
| Kaulana | |||
| Kaulana | Chamfer | ||
| Hoʻopili ʻia | |||
| Hoʻopili ʻia | Epi-mākaukau me ka hoʻopaʻa ʻumeke Puke cassette nui-wafer | ||
| *Nā memo: "NA" ʻo ia hoʻi, ʻaʻohe noi ʻO nā mea i ʻōlelo ʻole ʻia e pili ana i SEMI-STD. | |||
