Hoʻokaʻawale ʻia nā substrates GaAs i conductive a me semi-insulating, i hoʻohana nui ʻia i ka laser (LD), semiconductor light-emitting diode (LED), kokoke-infrared laser, quantum well high-power laser a me nā panela solar kiʻekiʻe. HEMT a me HBT chips no ka radar, microwave, ka nalu millimeter a i ʻole nā kamepiula kiʻekiʻe kiʻekiʻe a me nā kamaʻilio ʻike; ʻO nā mea lekiō no ke kamaʻilio uea, 4G, 5G, kamaʻilio ukali, WLAN.
I kēia mau lā, ua holomua nui nā substrates gallium arsenide i ka mini-LED, Micro-LED, a me ka ʻulaʻula LED, a hoʻohana nui ʻia i nā mea hiki ke hoʻohana ʻia ma AR/VR.
Anawaena | 50mm | 75mm | 100mm | 150mm |
ʻAno ulu | LEC液封直拉法 |
Mānoanoa Wafer | 350 um ~ 625 um |
Kūlana | <100> / <111> / <110> a i ʻole |
ʻAno Conductive | P - ʻano / N - ʻano / Semi-insulating |
ʻAno/Dopant | Zn / Si / wehe ʻole ʻia |
Kaʻa lawe | 1E17 ~ 5E19 knm-3 |
Kū'ē ma RT | ≥1E7 no SI |
Ka neʻe ʻana | ≥4000 |
EPD(Etch Pit Density) | 100~1E5 |
TTV | ≤ 10 um |
Kakaka / Warp | ≤ 20 um |
Hoʻopau ʻili | DSP/SSP |
Hōʻailona Laser |
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Papa | Epi poli pohihihi / mechanical grade |