Silicon Thermal Oxide Wafer

ʻO ka wehewehe pōkole:

ʻO Semicera Energy Technology Co., Ltd. kahi mea hoʻolako alakaʻi kūikawā i ka wafer a me nā mea hoʻohana semiconductor holomua. Hoʻolaʻa mākou i ka hāʻawi ʻana i nā huahana kiʻekiʻe, hilinaʻi, a me nā mea hou i ka hana semiconductor, ʻoihana photovoltaic a me nā ʻoihana ʻē aʻe e pili ana.

Loaʻa i kā mākou laina huahana nā huahana graphite i uhi ʻia ʻo SiC/TaC a me nā huahana seramika, e hoʻopuni ana i nā mea like ʻole e like me ka silicon carbide, silicon nitride, a me ka alumini oxide a me nā mea ʻē aʻe.

I kēia manawa, ʻo mākou wale nō ka mea hana e hāʻawi i ka maʻemaʻe 99.9999% SiC coating a me 99.9% recrystallized silicon carbide. ʻO ka lōʻihi o ka uhi ʻana o SiC hiki iā mākou ke hana 2640mm.

E hoʻouna i ka leka uila iā mākou

Huahana Huahana

ʻO ka ʻāpana ʻokikene wela o kahi wafer silika he ʻāpana oxide a i ʻole ka papa silica i hoʻokumu ʻia ma ka ʻili ākea o kahi wafer silika ma lalo o nā kūlana wela kiʻekiʻe me kahi mea hoʻoheheʻe.Hoʻoulu pinepine ʻia ka ʻāpana wai wela o ka wafer silika i loko o ka umu wela o ka wela, a ʻo ka nui o ka ulu ʻana he 900 ° C ~ 1200 ° C, a ʻelua mau ʻano ulu o ka "wet oxidation" a me ka "dry oxidation". ʻO ka papa wai wela he "grown" oxide layer i ʻoi aku ka kiʻekiʻe o ka homogeneity a me ka ikaika dielectric kiʻekiʻe ma mua o ka CVD i waiho ʻia i ka oxide layer. He papa dielectric maikaʻi loa ka ʻāpana thermal oxide ma ke ʻano he insulator. I loko o nā mea hana kilika he nui, he mea koʻikoʻi ka ʻāpana thermal oxide ma ke ʻano he doping blocking layer a me surface dielectric.

Manaʻo kōkua: ʻAno oxidation

1. Hoʻoheheʻe maloʻo

Hoʻopili ke silikoni me ka oxygen, a neʻe ka papa ʻokikene i ka papa basal. Pono e lawe ʻia ka oxidation maloʻo ma kahi mahana o 850 a 1200 ° C, a he haʻahaʻa ka ulu ʻana, hiki ke hoʻohana ʻia no ka ulu ʻana o ka puka insulation MOS. Ke koi ʻia kahi papa kiʻekiʻe kiʻekiʻe, ultra-thin silicon oxide, ʻoi aku ka maikaʻi o ka oxidation maloʻo ma mua o ka oxidation pulu.

ʻO ka hiki ke hoʻokahe maloʻo: 15nm ~ 300nm (150A ~ 3000A)

2. Wet oxidation

Ke hoʻohana nei kēia ʻano i ka hui ʻana o ka hydrogen a me ka oxygen maʻemaʻe kiʻekiʻe e puhi i ka ~ 1000 ° C, no laila e hana ana i ka mahu wai e hana i kahi papa oxide. ʻOiai ʻaʻole hiki i ka oxidation pulu ke hana e like me ke kiʻekiʻe o ka oxidation papa e like me ka oxidation maloʻo, akā lawa e hoʻohana ʻia ma ke ʻano he wahi kaʻawale, ke hoʻohālikelike ʻia me ka oxidation maloʻo he pōmaikaʻi ʻoi aku ka nui o ka ulu ʻana.

Hiki ke hoʻoemi ʻia: 50nm~ 15µm (500A ~15µm)

3. Keʻano maloʻo - keʻano pulu - keʻano maloʻo

Ma kēia ʻano, hoʻokuʻu ʻia ka oxygen maloʻo maʻemaʻe i loko o ka umu hoʻoheheʻe i ka pae mua, hoʻohui ʻia ka hydrogen i waenakonu o ka oxidation, a mālama ʻia ka hydrogen i ka hopena no ka hoʻomau ʻana i ka oxidation me ka oxygen maloʻo maʻemaʻe e hana i kahi ʻano oxidation denser ma mua o ʻo ke kaʻina hana hoʻokahe wai maʻamau ma ke ʻano o ka mahu wai.

4. TEOS oxidation

ʻenehana hoʻokahe 氧化工艺	Wet oxidation a maloʻo oxidation 湿法氧化/干法氧化
Anawaena 硅片直径	2″ / 3″ / 4″ / 6″ / 8″ / 12″ 英寸
Mānoanoa Oxide 氧化层厚度	100 Å ~ 15µm 10nm~15µm
Hoʻomanawanui 公差范围	+/- 5%
Ili 表面	Hoʻokahi ʻaoʻao oxidation (SSO) / ʻaoʻao ʻelua ʻOxidation (DSO) 单面氧化/双面氧化
Ke kapuahi 氧化炉类型	kapuahi paipu horizontal 水平管式炉
kinoea 气体类型	ʻO ke kinoea hydrogen a me Oxygen 氢氧混合气体
Mahana 氧化温度	900 ℃ ~ 1200 ℃ 900 ~ 1200摄氏度
Hōʻike hōʻike 折射率	1.456